Method of manufacturing display device
地域：
Yongin-si
摘要
A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.
說明書
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
This application is a National Stage Entry of International Application No. PCT/KR2020/004330, filed on Mar. 30, 2020, and claims priority from and the benefit of Korean Patent Application No. 10-2019-0067577, filed on Jun. 7, 2019, each of which is hereby incorporated by reference for all purposes as if fully set forth herein.
Embodiments of the invention relate generally to a method of manufacturing a display device. More particularly, embodiments relate to a method of manufacturing a display device for improving characteristics of a thin film transistor.
An active matrix (AM) type display device may include a pixel circuit in each pixel, and the pixel circuit may include a thin film transistor (TFT) using silicon. The TFT may be formed of amorphous silicon or polysilicon.
Since an active layer having a source, a drain, and a channel is formed of amorphous silicon (a-Si), an a-Si TFT used in the pixel circuit may have a low electron mobility of about 1 cm2/Vs or less. Therefore, the a-Si TFT has been recently replaced with a polysilicon (poly-Si) TFT. The poly-Si TFT has a higher electron mobility and a safer light illumination than the a-Si TFT. Therefore, the poly-Si TFT may be appropriate to be used as an active layer of a driving TFT and/or a switching TFT of the AM type display device.
The poly-Si may be manufactured according to several methods. These methods may be generally classified as either a method of depositing poly-Si or a method of depositing and crystallizing a-Si.
權(quán)利要求
What is claimed is:1. A method of manufacturing a display device, the method comprising:forming a polysilicon layer on a substrate; patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness; forming a gate insulation layer on the polysilicon pattern; forming a gate electrode on the gate insulation layer; implanting ions into part of the polysilicon pattern to form an active layer, after forming the gate electrode; forming an insulation interlayer on the gate electrode; forming a source contact hole and a drain contact hole, each of the source contact hole and the drain contact hole passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region; forming a source electrode and a drain electrode respectively filling the source contact hole and the drain contact hole; and forming a light emitting element electrically connected to the source electrode or the drain electrode, wherein forming the source contact hole and the drain contact hole includes flattening an upper surface of the active layer. 2. The method of claim 1 , wherein forming the polysilicon layer includes:forming an amorphous silicon layer on the substrate; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogenated deionized water; and irradiating the amorphous silicon layer with a laser beam. 3. The method of claim 2 , wherein an energy density of the laser beam is in a range of 450 mJ/cm2 to 500 mJ/cm2. 4. The method of claim 1 , wherein the first thickness is greater than 250 angstroms (?) and less than 470 ?. 5. The method of claim 1 , wherein the second thickness is in a range of 250 ? to 450 ?. 6. The method of claim 1 , wherein patterning the polysilicon layer includes:forming a photoresist layer on the polysilicon layer; patterning the photoresist layer to form a first photoresist pattern overlapping the first region, the second region, and the third region; etching the polysilicon layer by the first thickness using the first photoresist pattern; patterning the first photoresist pattern to form a second photoresist pattern overlapping the first region and the second region; and etching the polysilicon layer by a thickness obtained by subtracting the second thickness from the first thickness using the second photoresist pattern. 7. The method of claim 6 , wherein:the first photoresist pattern is formed by exposing and developing the photoresist layer with a first mask; and the second photoresist pattern is formed by exposing and developing the first photoresist pattern with a second mask. 8. The method of claim 6 , wherein:the first photoresist pattern is formed by exposing and developing the photoresist layer with a halftone mask; and the second photoresist pattern is formed by ashing the first photoresist pattern. 9. The method of claim 1 , wherein the active layer includes:a source region including the first region and implanted with the ions; a drain region including the second region and implanted with the ions; and a channel region formed between the source region and the drain region and not implanted with the ions. 10. The method of claim 9 , wherein the channel region overlaps the gate electrode. 11. The method of claim 1 , wherein forming the source contact hole and the drain contact hole includes:etching the first region and the second region of the polysilicon pattern by a thickness greater than or equal to a thickness obtained by subtracting the second thickness from the first thickness. 12. The method of claim 1 , wherein forming the light emitting element includes:forming a first electrode electrically connected to the source electrode or the drain electrode; forming an emission layer on the first electrode; and forming a second electrode on the emission layer. 13. A method of manufacturing a display device, the method comprising:forming a polysilicon layer on a substrate; patterning the polysilicon layer to form a polysilicon pattern including a main body, and a first protrusion and a second protrusion each protruding upward from an upper surface of the main body; forming a gate insulation layer on the polysilicon pattern; forming a gate electrode on the gate insulation layer; implanting ions into part of the polysilicon pattern to form an active layer, after forming the gate electrode; forming an insulation interlayer on the gate electrode; forming a source contact hole and a drain contact hole, each of the source contact hole and the drain contact hole passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first protrusion and the second protrusion; forming a source electrode and a drain electrode respectively filling the source contact hole and the drain contact hole; and forming a light emitting element electrically connected to the source electrode or the drain electrode, wherein forming the source contact hole and the drain contact hole includes completely removing each of the first protrusion and the second protrusion of the polysilicon pattern. 14. The method of claim 13 , wherein forming the polysilicon layer includes:forming an amorphous silicon layer on the substrate; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogenated deionized water; and irradiating the amorphous silicon layer with a laser beam. 15. The method of claim 13 , wherein a thickness of the main body is in a range of 250 ? to 450 ?. 16. The method of claim 13 , wherein each of a thickness of the first protrusion and a thickness of the second protrusion is greater than 0 ? and less than 220 ?. 17. The method of claim 13 , wherein the active layer includes:a source region including the first protrusion and implanted with the ions; a drain region including the second protrusion and implanted with the ions; and a channel region formed between the source region and the drain region and not implanted with the ions. 18. The method of claim 17 , wherein the channel region overlaps the gate electrode. 19. The method of claim 13 , wherein forming the source contact hole and the drain contact hole further includes:forming a first recess overlapping the source contact hole and a second recess overlapping the drain contact hole in the active layer.
意見反饋
使用該功能遇到問題