Then, as illustrated in FIG. 3, the amorphous silicon layer 132 may be rinsed.

The amorphous silicon layer 132 may be rinsed using hydrogenated deionized water 220. For example, the hydrogenated deionized water 220 may have a hydrogen concentration of about 1.0 ppm. For example, the hydrogenated deionized water 220 may be supplied to the amorphous silicon layer 132 through a spray 230 while moving the substrate 110 under the fixed spray 230. The hydrofluoric acid 210 remaining on the amorphous silicon layer 132 may be removed by rinsing the amorphous silicon layer 132 with the hydrogenated deionized water 220.

When rinsing the amorphous silicon layer 132 using dehydrogenated deionized water, oxygen in the dehydrogenated deionized water may remain on the amorphous silicon layer 132, and the oxygen may be recognized as a circular defect caused by the oxygen after the crystallization. However, in the present embodiment, by rinsing the amorphous silicon layer 132 using the hydrogenated deionized water 220, the recognition of the circular defect may be prevented.

Then, as illustrated in FIGS. 4 and 5, the polysilicon layer 134 may be formed.