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Method of manufacturing display device

專利號(hào)
US12268053B2
公開日期
2025-04-01
申請(qǐng)人
Samsung Display Co., Ltd.(KR Yongin-si)
發(fā)明人
Jong-Oh Seo; Ji-Hwan Kim; Byung-Soo So; Dong-Min Lee; Jong-Hoon Choi
IPC分類
H01L21/00; H10K59/121; H10K71/00; H10D30/01; H10D30/67; H10D86/01; H10D86/40; H10D86/60; H10K59/12
技術(shù)領(lǐng)域
layer,may,electrode,region,drain,be,pattern,amorphous,silicon,hole
地域: Yongin-si

摘要

A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

說明書

Examples of the method of depositing the poly-Si include chemical vapor deposition (CVD), sputtering, vacuum evaporation, etc.

Examples of the method of depositing and crystallizing the a-Si include solid phase crystallization (SPC), excimer laser crystallization (ELC), metal induced crystallization (MIC), metal induced lateral crystallization (MILC), sequential lateral solidification (SLS), etc.

The above information disclosed in this Background section is only for understanding of the background of the inventive concepts, and, therefore, it may contain information that does not constitute prior art.

SUMMARY

Embodiments of the present invention provide a method of manufacturing a display device for improving characteristics of a thin film transistor.

Additional features of the inventive concepts will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts.

權(quán)利要求

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