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Method of manufacturing display device

專利號(hào)
US12268053B2
公開日期
2025-04-01
申請(qǐng)人
Samsung Display Co., Ltd.(KR Yongin-si)
發(fā)明人
Jong-Oh Seo; Ji-Hwan Kim; Byung-Soo So; Dong-Min Lee; Jong-Hoon Choi
IPC分類
H01L21/00; H10K59/121; H10K71/00; H10D30/01; H10D30/67; H10D86/01; H10D86/40; H10D86/60; H10K59/12
技術(shù)領(lǐng)域
layer,may,electrode,region,drain,be,pattern,amorphous,silicon,hole
地域: Yongin-si

摘要

A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

說明書

Then, the planarization layer 160 may be patterned to form a contact hole exposing the source electrode SE or the drain electrode DE. In an embodiment, as illustrated in FIG. 14, the drain electrode DE may be exposed by the contact hole. However, the inventive concepts are not limited thereto, and in another embodiment, the source electrode SE may be exposed.

Then, a first electrode E1 electrically connected to the drain electrode DE may be formed on the planarization layer 160. For example, a metal layer may be formed on the planarization layer 160 and patterned to form the first electrode E1 in contact with the drain electrode DE.

In an embodiment, the first electrode E1 may be an anode of the light emitting element EE. However, the inventive concepts are not limited thereto, and in another embodiment, the first electrode E1 may be a cathode of the light emitting element EE. The first electrode E1 may be formed as a transmissive electrode or a reflective electrode depending on the emission type of the light emitting element EE. When the first electrode E1 is formed as the transmissive electrode, the first electrode E1 may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), or the like. When the first electrode E1 is formed as the reflective electrode, the first electrode E1 may include gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), or the like, and may have a laminated structure with the material used for the transmissive electrode.

權(quán)利要求

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