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Method of manufacturing display device

專利號(hào)
US12268053B2
公開日期
2025-04-01
申請人
Samsung Display Co., Ltd.(KR Yongin-si)
發(fā)明人
Jong-Oh Seo; Ji-Hwan Kim; Byung-Soo So; Dong-Min Lee; Jong-Hoon Choi
IPC分類
H01L21/00; H10K59/121; H10K71/00; H10D30/01; H10D30/67; H10D86/01; H10D86/40; H10D86/60; H10K59/12
技術(shù)領(lǐng)域
layer,may,electrode,region,drain,be,pattern,amorphous,silicon,hole
地域: Yongin-si

摘要

A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

說明書

Although the methods of manufacturing the display devices according to the inventive concepts have been described with reference to the drawings, the illustrated embodiments are examples, and may be modified and changed by a person having ordinary knowledge in the relevant technical field without departing from the technical spirit of the inventive concepts described in the following claims.

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