專利號：US14488564
申請人：Prism Solar Technologies Incorporated
主分類號：H01L31/048
所在地：NY Highland
A photovoltaic module employing an array of photovoltaic cells disposed between two optically transparent substrates such as to define a closed-loop p...
專利號：US14440754
申請人：Dow Corning Corporation
主分類號：H01L31/048
所在地：MI Midland
An electronic article has a perimeter and includes a superstrate, an optoelectronic element disposed on the superstrate, and a silicone encapsulant th...
專利號：US13695739
申請人：Hyun Cheol Kim; Hyun Seong Ko; Hyo Soon Park; Yoon Kyung Kwon; Do Won Ahn
主分類號：B05D3/02
所在地：Daejeon
Provided are a multi-layered sheet, a backsheet for a photovoltaic cell, a method of preparing the same and a photovoltaic module. The multi-layered s...
專利號：US13497194
申請人：Frank Hergert; Volker Probst; Jan Rudolf Thyen
主分類號：C23C14/08
所在地：Brandenburg
A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or poly...
專利號：US14738529
申請人：STMicroelectronics SA
主分類號：H01L31/0232
所在地：Montrouge
The disclosure relates to an image sensor comprising a substrate region in a semiconductor material; an active layer in contact with the substrate reg...
專利號：US14244575
申請人：MITSUBISHI MATERIALS CORPORATION
主分類號：H01L31/0224
所在地：Tokyo
A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanop...
專利號：US13175756
申請人：Mudhafar Hassan-Ali; Boris Golubovic
主分類號：H02J1/00
所在地：CA Petaluma
Techniques are described to harvest power from a single current carrying conductor to furnish power to a powered device. The techniques employ a power...
專利號：US12904919
申請人：Maxym Makhota; Shmuel Arditi; Ron Hadar
主分類號：H01L31/02
所在地：CA Campbell
Provided are a system and method for determining a connectivity topology of local management units (LMUs) in a solar photovoltaic power generation (SP...
專利號：US13135798
申請人：Timothy P. Holme; Friedrich B. Prinz; Andrei Iancu
主分類號：H02J7/00
所在地：CA Menlo Park
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide h...
專利號：US14837615
申請人：Unisantis Electronics Singapore Pte. Ltd.
主分類號：H01L29/788
所在地：Peninsula Plaza
A nonvolatile semiconductor memory transistor includes an island-shaped semiconductor having a source region, a channel region, and a drain region for...
專利號：US14043324
申請人：Samsung Electronics Co., Ltd.
主分類號：H01B1/06
所在地：Suwon-Si, Gyeonggi-Do
A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.
專利號：US14267216
申請人：GLOBALFOUNDRIES Inc.
主分類號：H01L29/66
所在地：Grand Cayman
One method disclosed includes, among other things, forming a gate structure above an active region of a semiconductor substrate, wherein a first porti...
專利號：US14338217
申請人：Empire Technology Development LLC
主分類號：H01L29/10
所在地：DE Wilmington
Technologies are generally described for reduction of the characteristic on resistance for a transistor device. In some examples, a transistor device ...
專利號：US14155651
申請人：Samsung Electronics Co., Ltd.
主分類號：G11C11/34
所在地：Gyeonggi-do
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device...
專利號：US14295377
申請人：Infineon Technologies Dresden GmbH
主分類號：H01L31/072
所在地：Dresden
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed...
專利號：US14665704
申請人：International Business Machines Corporation
主分類號：H01L21/265
所在地：NY Armonk
Embodiments of the present disclosure provide a method of processing an integrated circuit (IC) structure for metal gate replacement, the method compr...
專利號：US14664595
申請人：Gold Standard Simulations Ltd.
主分類號：H01L21/336
所在地：Glasgow, Scotland
Variation resistant metal-oxide-semiconductor field effect transistors (MOSFETs) are manufactured using a high-K, metal-gate ‘channel-last’ process. A...
專利號：US14821815
申請人：UNITED MICROELECTRONICS CORP.
主分類號：H01L29/66
所在地：Hsin-Chu
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacen...
專利號：US14515514
申請人：UNITED MICROELECTRONICS CORPORATION
主分類號：H01L21/02
所在地：Hsinchu
A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric...
專利號：US14295649
申請人：Semiconductor Manufacturing International (Shanghai) Corporation
主分類號：H01L29/49
所在地：Shanghai
A method is provided for fabricating stripe structures. The method includes providing a substrate; and forming a to-be-etched layer on the substrate. ...
專利號：US14322555
申請人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號：H01L21/00
所在地：Atsugi-shi, Kanagawa-ken
To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration ...
專利號：US14260663
申請人：Infineon Technologies Austria AG
主分類號：H01L29/36
所在地：Villach
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of con...
專利號：US13895134
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/322
所在地：Hsin-Chu
A method includes annealing a silicon region in an environment including hydrogen (H2) and hydrogen chloride (HCl) as process gases. After the step of...
專利號：US12577929
申請人：Qingchun Zhang; Sei-Hyung Ryu; Anant K. Agarwal; Sarit Dhar
主分類號：H01L29/267
所在地：NC Cary
A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift la...
專利號：US13242970
申請人：Shekar Mallikarjunaswamy; Fran?ois Hébert
主分類號：H01L21/331
所在地：CA San Jose
A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter effi...
專利號：US14495046
申請人：Infineon Technologies Austria AG
主分類號：H01L29/73
所在地：Villach
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction...
專利號：US13302091
申請人：In Sang Song; Sung Woo Hwang; Yun Kwon Park; Byeong Kwon Ju; Jae Sung Rieh; Jea Shik Shin; Hee Tae Kim
主分類號：H01L29/06
所在地：Osan-si
A resonator and a method for manufacturing a resonator are provided. The method may include doping a wafer, and forming on the wafer a substrate, a dr...
專利號：US14358982
申請人：SEIKO EPSON CORPORATION
主分類號：H01L27/02
所在地：Tokyo
A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impuri...
專利號：US14747891
申請人：RENESAS ELECTRONICS CORPORATION
主分類號：H01L27/108
所在地：Kanagawa
A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from t...
專利號：US14688807
申請人：QUALCOMM, Incorporated
主分類號：H01L49/02
所在地：CA San Diego
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor...
專利號：US14679814
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/20
所在地：Hsin-Chu
A method for forming a semiconductor device includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric la...
專利號：US13806215
申請人：BOE TECHNOLOGY GROUP CO., LTD.
主分類號：H01L29/08
所在地：Beijing
Embodiments of the invention provide an organic thin film transistor, an organic thin film transistor array substrate and a display device. The organi...
專利號：US14480823
申請人：Japan Display Inc.
主分類號：H01L27/32
所在地：Tokyo
An organic electroluminescent display device includes a substrate, plural pixel electrodes that are disposed on the substrate, an insulating layer tha...
專利號：US14265695
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：H01L27/32
所在地：Yongin, Gyeonggi-Do
An organic light emitting device includes an organic light emitting element and a sensor. The organic light emitting element includes an organic layer...
專利號：US14133218
申請人：Samsung Display Co., Ltd.
主分類號：H01L51/56
所在地：Yongin, Gyeonggi-Do
Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an...
專利號：US14627239
申請人：Sharp Kabushiki Kaisha
主分類號：H01L33/00
所在地：Osaka
A light emitting device includes: a ceramic substrate; a plurality of LED chips; a printed resistor(s) connected in parallel with the plurality of LED...
專利號：US14070261
申請人：Sony Corporation
主分類號：H01L27/146
所在地：Tokyo
A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element conv...
專利號：US14524182
申請人：Sony Corporation
主分類號：H01L31/062
所在地：Tokyo
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident ...
專利號：US14473204
申請人：Kabushiki Kaisha Toshiba
主分類號：H01L27/14
所在地：Minato-ku
According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor...
專利號：US14091698
申請人：Sony Corporation
主分類號：H01L27/146
所在地：Tokyo
A semiconductor apparatus includes a first semiconductor chip, a second semiconductor chip, and a flare prevention plate. On the first semiconductor c...
專利號：US14634557
申請人：RENESAS ELECTRONICS CORPORATION
主分類號：H01L27/146
所在地：Kanagawa
A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad ...
專利號：US14128263
申請人：BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
主分類號：H01L31/0352
所在地：Beijing
A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arran...
專利號：US14739854
申請人：CANON KABUSHIKI KAISHA
主分類號：H01L27/00
所在地：Tokyo
A light guide portion includes a low refractive index portion and a high refractive index portion. The low refractive index portion has a refractive i...
專利號：US14098384
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：H01L29/04
所在地：Yongin, Gyeonggi-do
According to an embodiment of the present invention, a thin film transistor array panel includes a gate line and a data line insulated from each other...
專利號：US14480751
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：G02F1/1343
所在地：Yongin, Gyeonggi-do
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that in...
專利號：US14301346
申請人：E Ink Holdings Inc.
主分類號：G02F1/167
所在地：Hsinchu
An active device array substrate includes a substrate, first signal lines, second signal lines, pixel units, selection units, an insulating layer, and...
專利號：US13375230
申請人：Yizhuang Zhuang; Jungmao Tsai; Songxian Wen; Mingfeng Deng; Xiaoxin Zhang
主分類號：G02F1/1362
所在地：Shenzhen
A TFT array substrate includes a pixel region and a wiring region disposed outside the pixel region. The wiring region has a wiring layer including sc...
專利號：US14170202
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：H01L21/00
所在地：Yongin, Gyeonggi-Do
A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the sub...
專利號：US14642937
申請人：International Business Machines Corporation
主分類號：H01L21/70
所在地：NY Armonk
An finFET structure including a plurality of fins etched from a semiconductor substrate, a plurality of gates above and perpendicular to the plurality...
專利號：US14597259
申請人：KABUSHIKI KAISHA TOSHIBA
主分類號：H01L27/108
所在地：Tokyo
According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one s...