專利號(hào)：US14557939
申請(qǐng)人：Universal Display Corporation
主分類號(hào)：H01L27/32
所在地：NJ Ewing
Systems, and methods for the design and fabrication of OLEDs, including large-area OLEDs with metal bus lines, are provided. For a given panel area di...
專利號(hào)：US14465047
申請(qǐng)人：Kabushiki Kaisha Toshiba
主分類號(hào)：H01L29/788
所在地：Minato-ku
According to an embodiment, a semiconductor device includes at least two control electrodes, a plurality of semiconductor layers and an insulating fil...
專利號(hào)：US14951048
申請(qǐng)人：SK hynix Inc.
主分類號(hào)：H01L27/24
所在地：Icheon-Si
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor mem...
專利號(hào)：US14303654
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：H01L35/00
所在地：Neubiberg
A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direct...
專利號(hào)：US14593733
申請(qǐng)人：SAMSUNG ELECTRONICS CO., LTD.
主分類號(hào)：H01L29/06
所在地：Suwon-Si, Gyeonggi-do
There are provided a light-emitting device and a light-emitting device package capable of simultaneously controlling brightness and correlated color t...
專利號(hào)：US12666228
申請(qǐng)人：Jae Cheon Han
主分類號(hào)：H01L33/00
所在地：Gwangju
A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a se...
專利號(hào)：US14696924
申請(qǐng)人：BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
主分類號(hào)：H01L21/00
所在地：Beijing
A flat panel detector comprises a photoelectric conversion layer and a pixel detecting element disposed under the photoelectric conversion layer. The ...
專利號(hào)：US14555352
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H01L27/148
所在地：Tokyo
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusi...
專利號(hào)：US14992922
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H01L27/146
所在地：Tokyo
At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped ...
專利號(hào)：US14475690
申請(qǐng)人：Sony Corporation
主分類號(hào)：H01L31/0232
所在地：Tokyo
A solid-state imaging apparatus includes a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structu...
專利號(hào)：US14948810
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H01L27/146
所在地：Tokyo
An image pickup element includes a first pixel, a second pixel, and a third pixel that share one microlens, a first boundary that is provided between ...
專利號(hào)：US14542169
申請(qǐng)人：OmniVision Technologies, Inc.
主分類號(hào)：H01L27/146
所在地：CA Santa Clara
An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die cov...
專利號(hào)：US14977562
申請(qǐng)人：Au Optronics Corporation
主分類號(hào)：G02F1/1343
所在地：Hsinchu
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulat...
專利號(hào)：US14588180
申請(qǐng)人：LG Display Co., Ltd.
主分類號(hào)：H01L27/32
所在地：Seoul
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodime...
專利號(hào)：US14700610
申請(qǐng)人：SAMSUNG DISPLAY CO., LTD.
主分類號(hào)：G02F1/1335
所在地：Yongin, Gyeonggi-Do
A display apparatus includes a first base substrate, a touch sensing part provided on the first base substrate, an electronic device provided on the f...
專利號(hào)：US14423838
申請(qǐng)人：KOBE STEEL, LTD.; Samsung Display Co., Ltd.
主分類號(hào)：H01L27/12
所在地：Kobe-shi
Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much...
專利號(hào)：US14541105
申請(qǐng)人：INNOLUX CORPORATION
主分類號(hào)：H01L27/12
所在地：Chu-Nan, Miao-Li County
A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor units disposed on the substrate and respe...
專利號(hào)：US14133979
申請(qǐng)人：SanDisk Technologies, Inc.
主分類號(hào)：H01L29/788
所在地：TX Plano
A select gate transistor for a NAND device includes a select gate electrode having a first side, a second side, and top and a bottom, a semiconductor ...
專利號(hào)：US14596257
申請(qǐng)人：MACRONIX INTERNATIONAL CO., LTD.
主分類號(hào)：H01L23/528
所在地：Hsinchu
A three-dimensional (3D) semiconductor device is provided, comprising a substrate having a staircase region comprising N steps, wherein N is an intege...
專利號(hào)：US14730230
申請(qǐng)人：UNITED MICROELECTRONICS CORP.
主分類號(hào)：H01L21/768
所在地：Hsin-Chu
A semiconductor structure includes a metal gate, a second dielectric layer and a contact plug. The metal gate is located on a substrate and in a first...
專利號(hào)：US14150469
申請(qǐng)人：Infineon Technologies Americas Corp.
主分類號(hào)：H01L25/18
所在地：CA El Segundo
According to an exemplary implementation, a power quad flat no-lead (PQFN) leadframe includes U-phase and W-phase power switches situated on the PQFN ...
專利號(hào)：US14567580
申請(qǐng)人：PS4 Luxco S.a.r.l.
主分類號(hào)：H01L23/495
所在地：Luxembourg
A semiconductor device includes an insulating substrate including a first surface and an opposing second surface, and a semiconductor chip. The semico...
專利號(hào)：US14566357
申請(qǐng)人：Semiconductor Manufacturing International (Shanghai) Corporation
主分類號(hào)：H01L21/768
所在地：Shanghai
A semiconductor device may include the following elements: a first substrate; a second substrate; a dielectric layer, which may be positioned between ...
專利號(hào)：US14427232
申請(qǐng)人：TOHOKU UNIVERSITY
主分類號(hào)：H01L21/02
所在地：Sendai-shi, Myagi
The present invention relates to a chip support substrate including a lyophilic region 4 that is formed on the substrate and that absorbs a chip 3A, a...
專利號(hào)：US14218265
申請(qǐng)人：Amkor Technology, Inc.
主分類號(hào)：H01L21/00
所在地：AZ Chandler
Disclosed are a semiconductor device and a manufacturing method thereof, which can achieve miniaturization and improvement in the integration level by...
專利號(hào)：US13178161
申請(qǐng)人：Pei-Chun Tsai; Sheng-Yu Wu; Ching-Wen Hsiao; Tin-Hao Kuo; Chen-Shien Chen; Chung-Shi Liu; Chien-Hsiun Lee; Mirng-Ji Lii
主分類號(hào)：H01L29/00
所在地：Zhongli
A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the ...
專利號(hào)：US13496221
申請(qǐng)人：Petrus Cornelis Paulus Bouten
主分類號(hào)：H01L29/40
所在地：Eindhoven
An electronic device (10, 20, 30, 40) is provided which comprises a substrate (16) supporting an inorganic layer (11) and a joint (13), mechanically c...
專利號(hào)：US15010531
申請(qǐng)人：Henkel IP & Holding GmbH
主分類號(hào)：H01L23/48
所在地：Duesseldorf
Provided herein are conductive die attach films having advantageous properties for use in a variety of applications, e.g., for the preparation of larg...
專利號(hào)：US14810415
申請(qǐng)人：INOTERA MEMORIES, INC.
主分類號(hào)：H01L23/544
所在地：Taoyuan
A semiconductor device includes a chip having an active surface and a rear surface that is opposite to the active surface; a molding compound covering...
專利號(hào)：US14096953
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L23/48
所在地：Hsin-Chu
A semiconductor device package and a method for forming the same using an improved solder joint structure are disclosure. The package includes solder ...
專利號(hào)：US14136103
申請(qǐng)人：SanDisk 3D LLC
主分類號(hào)：H01L27/115
所在地：CA Milpitas
A multi-level device includes at least one device region and at least one contact region. The contact region has a stack of alternating plurality of e...
專利號(hào)：US14969406
申請(qǐng)人：Intel Corporation
主分類號(hào)：H01L21/00
所在地：CA Santa Clara
Methods of forming anchor structures in package substrate microvias are described. Those methods and structures may include forming a titanium layer i...
專利號(hào)：US14792816
申請(qǐng)人：Sumitomo Electric Industries, Ltd.
主分類號(hào)：H01L23/64
所在地：Osaka-shi
An electronic device is disclosed. The electronic device comprises a transistor provided on a substrate, a transmission line provided on the substrate...
專利號(hào)：US14334212
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L23/522
所在地：Hsin-Chu
An integrated circuit structure includes a first and a second semiconductor chip. The first semiconductor chip includes a first substrate and a first ...
專利號(hào)：US13994668
申請(qǐng)人：Kevin J. Lee; Mark T. Bohr; Andrew W. Yeoh; Christopher M. Pelto; Hiten Kothari; Seshu V. Sattiraju; Hang-Shing Ma
主分類號(hào)：H01L23/48
所在地：OR Beaverton
A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vi...
專利號(hào)：US14800990
申請(qǐng)人：STS Semiconductor & Telecommunications Co., Ltd.
主分類號(hào)：H01L23/48
所在地：Cheonan-si, Chungcheongnam-do
Provided are a wafer level package and a manufacturing method thereof. The wafer level package method includes preparing a patterned wafer, forming a ...
專利號(hào)：US14726006
申請(qǐng)人：Mitsubishi Electric Corporation
主分類號(hào)：H01L23/498
所在地：Tokyo
A semiconductor device according to the present invention includes: an insulating substrate; a circuit pattern having a first surface that is bonded t...
專利號(hào)：US14514184
申請(qǐng)人：Micron Technology, Inc.
主分類號(hào)：H01L23/498
所在地：ID Boise
Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or ...
專利號(hào)：US13851007
申請(qǐng)人：UTAC Thai Limited
主分類號(hào)：H01L23/48
所在地：Bangkok
A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a lay...
專利號(hào)：US14887304
申請(qǐng)人：FREESCALE SEMICONDUCTOR, INC.
主分類號(hào)：H01L23/495
所在地：TX Austin
A packaged integrated circuit (IC) device having a heatsink mounted onto an IC die, itself mounted onto a die pad, is assembled using a lead frame hav...
專利號(hào)：US14198542
申請(qǐng)人：XINTEC INC.
主分類號(hào)：H01L21/78
所在地：Jhongli, Taoyuan County
An embodiment of the invention provides a chip package which includes: a semiconductor substrate; a device region formed in the semiconductor substrat...
專利號(hào)：US13873141
申請(qǐng)人：FURUI PRECISE COMPONENT (KUNSHAN) CO., LTD.; Foxconn Technology Co., Ltd.
主分類號(hào)：H01L23/40
所在地：Kunshan
An exemplary base includes a heat absorber and clips attached to the heat absorber. The heat absorber includes a top surface and a bottom surface. A p...
專利號(hào)：US13892118
申請(qǐng)人：Amkor Technology, Inc.
主分類號(hào)：H01L21/66
所在地：AZ Tempe
Methods for temporary bussing of semiconductor package substrates are disclosed and may include metal plating regions of a packaging substrate utilizi...
專利號(hào)：US14684953
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L21/66
所在地：Hsin-Chu
A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, ...
專利號(hào)：US14744887
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H01L21/00
所在地：NY Armonk
FinFET structures are formed on silicon germanium fins having high germanium content. Silicon germanium source/drain regions formed in fin recesses in...
專利號(hào)：US13376081
申請(qǐng)人：Hisayuki Kato; Yoshihiko Kusakabe
主分類號(hào)：H01L27/092
所在地：Kawasaki
First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by ...
專利號(hào)：US14710053
申請(qǐng)人：GLOBALFOUNDRIES Inc.
主分類號(hào)：H01L21/8234
所在地：Grand Cayman
A method includes forming a plurality of fins above a substrate, forming at least one dielectric material above and between the plurality of fins, and...
專利號(hào)：US14158398
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：H01L21/00
所在地：Neubiberg
A method of separating individual dies of a semiconductor wafer includes forming a metal layer on a first surface of a semiconductor wafer, the semico...
專利號(hào)：US14323677
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L21/44
所在地：Hsin-Chu
An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the sem...
專利號(hào)：US14755780
申請(qǐng)人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號(hào)：H01L21/76
所在地：NY Armonk
A method of forming electrically conductive structures that includes forming a copper containing layer including a barrier forming element, and applyi...