專利號(hào)：US14779881
申請(qǐng)人：SANYO Electric Co., Ltd.
主分類號(hào)：H01M4/134
所在地：Daito-shi, Osaka
There are provided a negative electrode for a nonaqueous electrolyte secondary battery having excellent initial efficiency and good moldability of pil...
專利號(hào)：US14625442
申請(qǐng)人：Technische Universiteit Delft
主分類號(hào)：H01M4/36
所在地：Delft
A method for covering particles having a diameter of maximally 60 μm by means of atomic layer deposition, whereby said method comprises the step of fl...
專利號(hào)：US14927757
申請(qǐng)人：Atieva, Inc.
主分類號(hào)：H01M2/34
所在地：CA Menlo Park
A battery enclosure is provided that externally shorts the enclosed battery, or batteries, immediately prior to the battery being punctured. As a resu...
專利號(hào)：US14828149
申請(qǐng)人：Johnson Controls Technology Company
主分類號(hào)：H01M2/24
所在地：MI Holland
The present disclosure includes a battery module having a power assembly that includes a plurality of battery cells and a plurality of bus bars that e...
專利號(hào)：US14234700
申請(qǐng)人：Hirohiko Hasegawa; Yuzuru Saitou
主分類號(hào)：H01M2/16
所在地：Niihama
The present invention provides a laminated porous film and a non-aqueous electrolyte secondary battery. The laminated porous film is a laminated porou...
專利號(hào)：US14877301
申請(qǐng)人：Dr. Ing. h.c. F. Porsche Aktiengesellschaft
主分類號(hào)：H01M2/10
所在地：Stuttgart
A battery housing part (10) for a traction battery has opposite first and second vertically aligned housing walls (12, 14) for laterally covering batt...
專利號(hào)：US14707679
申請(qǐng)人：Black & Decker Inc.
主分類號(hào)：H01M2/10
所在地：DE Newark
A battery pack may include a battery cell, a cradle, a board and a housing. The cradle may be coupled with the battery cell and may include one or mor...
專利號(hào)：US14692182
申請(qǐng)人：TOYOTA JIDOSHA KABUSHIKI KAISHA
主分類號(hào)：H01M2/00
所在地：Toyota-shi, Aichi-ken
Provided is a secondary battery in which a battery lid is fixed to a battery case by inserting the battery lid into an opening of the battery case hav...
專利號(hào)：US14894674
申請(qǐng)人：LOMOX LIMITED
主分類號(hào)：H01L51/52
所在地：Cheshire
There is provided an organic light emitting diode (OLED) comprising an organic electroluminescent layer formed between a first electrode and a second ...
專利號(hào)：US14612669
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H01L51/52
所在地：Yongin, Gyeonggi-Do
A display panel that includes a plurality of pixels, each pixel includes a first area including a display device; a second area including a first refl...
專利號(hào)：US14830475
申請(qǐng)人：LG DISPLAY CO., LTD.
主分類號(hào)：H01L27/32
所在地：Seoul
A flexible organic light emitting display and a method of fabricating the same are disclosed in which flexible organic light emitting display may be r...
專利號(hào)：US12816288
申請(qǐng)人：Seamus Curran; Sampath Dias; Nigel Alley; Amrita Haldar; Soniya Devi Yambem; Liao Kang-Shyang; Prajakta Chaudhari
主分類號(hào)：H01L31/00
所在地：TX Pearland
In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wr...
專利號(hào)：US14720405
申請(qǐng)人：LG Display Co., Ltd.
主分類號(hào)：H01L51/00
所在地：Seoul
Disclosed is a white organic light emitting device. The white organic light emitting device includes a first emission part between a first electrode a...
專利號(hào)：US14783229
申請(qǐng)人：Novaled GmbH
主分類號(hào)：H01L35/24
所在地：Dresden
The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, deposi...
專利號(hào)：US15203506
申請(qǐng)人：FUJIFILM Corporation
主分類號(hào)：H01L51/00
所在地：Tokyo
Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor activ...
專利號(hào)：US14596574
申請(qǐng)人：SAMSUNG DISPLAY CO., LTD.; PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION
主分類號(hào)：H01L51/00
所在地：Yongin, Gyeonggi-Do
An organic light-emitting device includes a first electrode, a second electrode, and an organic layer between the first electrode and the second elect...
專利號(hào)：US14290950
申請(qǐng)人：SAMSUNG DISPLAY CO., LTD.
主分類號(hào)：H01L51/50
所在地：Yongin, Gyeonggi-Do
A triazine-based compound is represented by Formula 1 and an organic light-emitting device includes the triazine-based compound.
專利號(hào)：US15053528
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H01L51/54
所在地：Tokyo
Provided is an organic light emitting device with enhanced durability during continuous driving. The organic light emitting device includes: an anode,...
專利號(hào)：US14108664
申請(qǐng)人：LG DISPLAY CO., LTD.
主分類號(hào)：H01L51/50
所在地：Seoul
A blue fluorescent compound is disclosed. The blue fluorescent compound represented by the following Chemical Formula 1, where R1 and R2 are each inde...
專利號(hào)：US13461580
申請(qǐng)人：Sang-Woo Pyo; Seung-Mook Lee; Byeong-Wook Yoo; Hyo-Yeon Kim; Myung-Jong Jung; Jin-Woo Park
主分類號(hào)：H01L51/52
所在地：Yongin
An organic light emitting diode (OLED) display includes a red pixel, a green pixel, and a blue pixel. The red pixel, the green pixel and the blue pixe...
專利號(hào)：US14883989
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H01L51/00
所在地：Yongin-si
A method for pixel patterning and pixel position inspection of an organic light-emitting display device includes: forming, on a substrate using a firs...
專利號(hào)：US13917501
申請(qǐng)人：Strategic Polymer Sciences, Inc.
主分類號(hào)：G06F3/01
所在地：PA State College
An inertial actuator includes an electro-active polymer EAP actuator, a substrate, and one or more mass elements. The EAP actuator includes at least o...
專利號(hào)：US14468373
申請(qǐng)人：GM GLOBAL TECHNOLOGY OPERATIONS LLC
主分類號(hào)：H01L35/34
所在地：MI Detroit
A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabric...
專利號(hào)：US14893922
申請(qǐng)人：OSRAM Opto Semiconductors GmbH
主分類號(hào)：H01L33/00
所在地：Regensburg
An optoelectronic semiconductor chip includes a semiconductor body that has a semiconductor layer sequence and at least one opening that extends throu...
專利號(hào)：US14377770
申請(qǐng)人：Dow Corning Corporation; Dow Corning Toray Co., Ltd.
主分類號(hào)：G02B1/04
所在地：MI Midland
An optical article includes a silicone-containing composition. The silicone composition includes a first region having a first refractive index and a ...
專利號(hào)：US14505362
申請(qǐng)人：LG Innotek Co., Ltd.
主分類號(hào)：H01L33/54
所在地：Seoul
A light emitting device module including a first and second lead frames, a light emitting device electrically connected to the first and second lead f...
專利號(hào)：US14747640
申請(qǐng)人：NICHIA CORPORATION
主分類號(hào)：H01L33/00
所在地：Anan-shi, Tokushima
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of ...
專利號(hào)：US14434801
申請(qǐng)人：SHOWA DENKO K.K.
主分類號(hào)：H01L33/40
所在地：Tokyo
In a light-emitting diode, a plurality of dot-shaped ohmic contact electrodes are provided between a metal reflective film and a compound semiconducto...
專利號(hào)：US14186540
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L33/38
所在地：Suwon-si
A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support stru...
專利號(hào)：US14842162
申請(qǐng)人：Kabushiki Kaisha Toshiba
主分類號(hào)：H01L33/36
所在地：Minato-ku
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an...
專利號(hào)：US14432529
申請(qǐng)人：Intellec Limited
主分類號(hào)：H01L21/033
所在地：Plymouth
A semiconductor wafer comprising a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the ...
專利號(hào)：US15009271
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：H01L21/00
所在地：Neubiberg
A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxi...
專利號(hào)：US14072267
申請(qǐng)人：Lingsen Precision Industries, Ltd.
主分類號(hào)：H01L31/173
所在地：Taichung
This invention relates to an optical module package structure. A substrate is defined with a light receiving region and a light emitting region. A lig...
專利號(hào)：US15107209
申請(qǐng)人：BOE TECHNOLOGY GROUP CO., LTD.
主分類號(hào)：H01L31/102
所在地：Beijing
The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field o...
專利號(hào)：US14527878
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H01L31/044
所在地：NY Armonk
A solar pod system, comprising of an oval transparent enclosure. The oval transparent enclosure encapsulates a circular paraboloidal reflector mounted...
專利號(hào)：US14085433
申請(qǐng)人：KABUSHIKI KAISHA TOSHIBA
主分類號(hào)：H01L31/032
所在地：Minato-ku, Tokyo
A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, con...
專利號(hào)：US14376499
申請(qǐng)人：Changzhou Shichuang Energy Technology Co., Ltd.
主分類號(hào)：H01L31/0236
所在地：Changzhou, Jiangsu
The invention provides an additive for preparing suede on a monocrystalline silicon chip, which comprises: polyethylene glycol, sodium benzoate, citri...
專利號(hào)：US15238797
申請(qǐng)人：SAMSUNG SDI CO., LTD.
主分類號(hào)：H01L21/00
所在地：Yongin-si, Gyeonggi-do
A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger ele...
專利號(hào)：US14936900
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H01L31/0216
所在地：NY Armonk
After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer an...
專利號(hào)：US14661165
申請(qǐng)人：Jesse A. Frantz; Jason D. Myers; Colin C. Baker; Jasbinder S. Sanghera; Steven C. Erwin
主分類號(hào)：H01L31/0216
所在地：MD Landover
A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the...
專利號(hào)：US15155915
申請(qǐng)人：TEXAS INSTRUMENTS INCORPORATED
主分類號(hào)：H01L29/87
所在地：TX Dallas
One embodiment of the disclosure relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielect...
專利號(hào)：US14828669
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：H01L29/66
所在地：Atsugi-shi, Kanagawa-ken
An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an...
專利號(hào)：US14677071
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：H01L27/14
所在地：Atsugi-shi, Kanagawa-ken
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin fil...
專利號(hào)：US14610383
申請(qǐng)人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號(hào)：H01L29/786
所在地：Atsugi-shi, Kanagawa-ken
To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The s...
專利號(hào)：US14943018
申請(qǐng)人：Polyera Corporation
主分類號(hào)：C08F2/46
所在地：IL Skokie
The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist wat...
專利號(hào)：US15270982
申請(qǐng)人：Advanced Micro Devices, Inc.
主分類號(hào)：H01L29/76
所在地：CA Sunnyvale
A system and method for fabricating non-planar devices while managing short channel and heating effects are described. A semiconductor device fabricat...
專利號(hào)：US15337728
申請(qǐng)人：IMEC VZW
主分類號(hào)：H01L29/76
所在地：Leuven
A Tunnel Field-Effect Transistor comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region doped with...
專利號(hào)：US15339402
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H01L29/792
所在地：NY Armonk
Embodiments are directed to a method of forming a semiconductor device and resulting structures having self-aligned spacer protection layers. The meth...
專利號(hào)：US15225559
申請(qǐng)人：RICHTEK TECHNOLOGY CORPORATION
主分類號(hào)：H01L21/04
所在地：Zhubei, Hsinchu
A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type bod...
專利號(hào)：US15181186
申請(qǐng)人：International Onizuka Electronics Limited
主分類號(hào)：H01L29/78
所在地：Hong Kong
A VDMOS includes a substrate; an epitaxial layer; first and second trenches defined in the epitaxial layer; a shielding gate and a control gate formed...