專利號：US14852049
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L29/78
所在地：Hsin-Chu
A lateral trench MOSFET comprises an insulating layer buried in a substrate, a body region in the substrate, an isolation region in the substrate, a f...
專利號：US15164754
申請人：Intel Corporation
主分類號：H01L29/66
所在地：CA Santa Clara
Techniques are disclosed for providing a low resistance self-aligned contacts to devices formed in a semiconductor heterostructure. The techniques can...
專利號：US14287085
申請人：Renesas Electronics Corporation
主分類號：H01L29/739
所在地：Kawasaki-shi, Kanagawa
A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first...
專利號：US14865052
申請人：Semiconductor Manufacturing International (Shanghai) Corporation
主分類號：H01L29/66
所在地：Shanghai
A method is provided for fabricating transistors. The method includes providing a semiconductor substrate. The substrate has a gate film and a mask fi...
專利號：US14963397
申請人：GLOBALFOUNDRIES Inc.
主分類號：H01L29/66
所在地：Grand Cayman
A method of controlling the facet height of raised source/drain epi structures using multiple spacers, and the resulting device are provided. Embodime...
專利號：US15165293
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L21/336
所在地：Hsinchu
A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate, a gate struct...
專利號：US15192889
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L29/267
所在地：Hsin-Chu
A method of forming a high electron mobility transistor (HEMT) that includes epitaxially growing a second III-V compound layer on a first III-V compou...
專利號：US14853719
申請人：STMicroelectronics S.A.
主分類號：H01L29/66
所在地：Montrouge
The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isol...
專利號：US15216016
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/423
所在地：Atsugi-shi, Kanagawa-ken
A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating e...
專利號：US14974019
申請人：International Business Machines Corporation
主分類號：H01L21/02
所在地：NY Armonk
An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer...
專利號：US14914214
申請人：Sumitomo Electric Industries, Ltd.
主分類號：H01L29/16
所在地：Osaka-shi
The silicon carbide semiconductor layer includes a first impurity region, a second impurity region, and a third impurity region. Turning to a first po...
專利號：US15298067
申請人：Alpha and Omega Semiconductor Incorporated
主分類號：H01L21/332
所在地：CA Sunnyvale
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a metho...
專利號：US14830980
申請人：Kabushiki Kaisha Toshiba
主分類號：H01L29/06
所在地：Minato-ku, Tokyo
According to one embodiment, a semiconductor device includes a plurality of first semiconductor regions of a first conductivity type, a plurality of s...
專利號：US14541765
申請人：The Board of Trustees of the University of Illinois
主分類號：C03C15/00
所在地：IL Urbana
A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern la...
專利號：US15199262
申請人：General Electric Company
主分類號：H01L29/16
所在地：NY Schenectady
A charge-balanced (CB) diode may include one or more CB layers. Each CB layer may include an epitaxial layer having a first conductivity type and a pl...
專利號：US14705647
申請人：MITSUBISHI ELECTRIC CORPORATION
主分類號：H01L29/02
所在地：Chiyoda-ku
A semiconductor device is provided. On one main surface side of an n-type semiconductor substrate, a p-type diffusion region to serve as an anode of a...
專利號：US13984081
申請人：Ewald Karl Michael Günther; Andreas Pl?βl; Heribert Zull; Thomas Veit; Mathias K?mpf; Jens Dennemarck; Bernd B?hm; Korbinian Perzlmaier
主分類號：H01L29/06
所在地：Regenstauf
A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first m...
專利號：US15162667
申請人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號：H01L27/32
所在地：Atsugi-shi, Kanagawa-ken
It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing re...
專利號：US14879591
申請人：Samsung Display Co., Ltd.
主分類號：H01L27/32
所在地：Yongin-si, Gyeonggi-do
An organic light emitting diode (OLED) display device including: a substrate; first, second and third thin film transistors sequentially laminated ove...
專利號：US14956978
申請人：Samsung Display Co., LTD.
主分類號：H01L27/32
所在地：Yongin, Gyeonggi-Do
A display panel includes a plurality of unit pixels, where each of the unit pixels has a hexagonal-shape and includes: a first sub-pixel configured to...
專利號：US14850527
申請人：KABUSHIKI KAISHA TOSHIBA
主分類號：H01L45/00
所在地：Minato-ku
According to one embodiment, this semiconductor memory device includes first conducting layers, a memory layer, and second conducting layers. The firs...
專利號：US14924144
申請人：SANDISK 3D LLC
主分類號：H01L27/24
所在地：CA Milpitas
A memory device includes at least one memory cell. The at least one memory cell includes a steering element, a resistive memory element, and a tunneli...
專利號：US15192068
申請人：QUALCOMM Incorporated
主分類號：H01L29/66
所在地：CA San Diego
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells are disclosed. In one aspect, ...
專利號：US15187438
申請人：Samsung Display Co., Ltd.
主分類號：H01L29/18
所在地：Yongin-si, Gyeonggi-do
A display panel including: a cathode electrode formed in a cathode region of the display panel, the cathode electrode entirely covering an active regi...
專利號：US15219200
申請人：Artilux Corporation
主分類號：H01L31/0232
所在地：Grand Cayman
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical sem...
專利號：US15072708
申請人：CANON KABUSHIKI KAISHA
主分類號：H01L27/148
所在地：Tokyo
An image sensor is provided. The sensor comprises a plurality of photoelectric conversion elements each including a charge accumulation region of a fi...
專利號：US15094505
申請人：Raytheon Company
主分類號：H01L27/14
所在地：MA Waltham
An electro-optical sensor chip assembly (SCA) is provided and includes a read-out integrated circuit (ROIC), a detector including a substrate, a buffe...
專利號：US14837795
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L27/146
所在地：Hsin-Chu
An embodiment isolation structure includes a first passivation layer over a bottom surface and extending along sidewalls of a trench in a semiconducto...
專利號：US14921175
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/10
所在地：Kanagawa-ken
An imaging device with excellent imaging performance is provided. In the imaging device, a first layer, a second layer, and a third layer have a regio...
專利號：US14987777
申請人：Powerchip Technology Corporation
主分類號：H01L27/146
所在地：Hsinchu
A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric ...
專利號：US15018861
申請人：Innolux Corporation
主分類號：H01L29/49
所在地：Chu-Nan, Miao-Li County
A display panel including a first substrate, a second substrate and a display medium is provided. The first substrate includes a base substrate, a gat...
專利號：US15394424
申請人：Shenzhen China Star Optoelectronics Technology Co., Ltd.
主分類號：H01L27/12
所在地：Shenzhen, Guangdong
The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active...
專利號：US15252931
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L21/70
所在地：Suwon-si, Gyeonggi-do
A vertical NAND-type memory device includes a vertical stack of inter-gate insulating layers and gate electrodes arranged in an alternating sequence o...
專利號：US15046655
申請人：Kabushiki Kaisha Toshiba
主分類號：H01L29/792
所在地：Minato-ku
A semiconductor memory device includes a first stacked body, a semiconductor pillar extending the first direction and piercing the first stacked body,...
專利號：US14963437
申請人：eASIC Corporation
主分類號：G11C5/06
所在地：CA Santa Clara
A bitline structure for use in a memory device may be connected to a plurality of bit memory cells. The bitline may be segmented into segments connect...
專利號：US15163799
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L27/12
所在地：Atsugi-shi, Kanagawa-ken
A semiconductor device that is suitable for miniaturization is provided. Alternatively, a highly reliable semiconductor device is provided. A semicond...
專利號：US14746229
申請人：Sang-Jine Park; Bo-Un Yoon; Ha-Young Jeon; Yeon-Jin Gil; Ji-Won Yun; Won-Sang Choi
主分類號：H01L21/70
所在地：Yongin-si
Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes fir...
專利號：US15285700
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L21/8238
所在地：NY Armonk
A method of forming a semiconductor device that includes providing regions of epitaxial oxide material on a substrate of a first lattice dimension, wh...
專利號：US15148052
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L27/088
所在地：NY Armonk
A method for fabricating a semiconductor device comprises removing a portion of a substrate to form a first cavity in the substrate and depositing an ...
專利號：US13671506
申請人：Hubert M. Bode; Weize Chen; Richard J. De Souza; Patrice M. Parris
主分類號：H01L27/04
所在地：Haar
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (i...
專利號：US15140516
申請人：GLOBALFOUNDRIES INC.
主分類號：H01L29/66
所在地：Grand Cayman
Field effect diode structures utilize a junction structure that has an L-shape in cross-section (a fin extending from a planar portion). An anode is p...
專利號：US14875570
申請人：Tela Innovations, Inc.
主分類號：H01L27/02
所在地：CA Los Gatos
A linear-shaped core structure of a first material is formed on an underlying material. A layer of a second material is conformally deposited over the...
專利號：US15133032
申請人：Renesas Electronics Corporation
主分類號：H01L23/495
所在地：Tokyo
To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear su...
專利號：US14532532
申請人：Amkor Technology, Inc.
主分類號：H01L21/4763
所在地：AZ Chandler
An interposer having a multilayered conductive pattern portion that is constructed by repeating the direct printing on a carrier of one or more conduc...
專利號：US14226802
申請人：UNITED MICROELECTRONICS CORP.
主分類號：H01L21/70
所在地：Hsin-Chu
A wafer package process includes the following steps. A wafer with a plurality of first dies is provided. A plurality of second dies are bonded on the...
專利號：US15253120
申請人：LITE-ON SINGAPORE PTE. LTD.
主分類號：H01L25/16
所在地：Midview
A detection device and a method of manufacturing the same are disclosed. The detection device includes a detection module and a housing module dispose...
專利號：US15014636
申請人：MediaTek Inc.
主分類號：H01L23/485
所在地：Hsin-Chu
The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package including a first s...
專利號：US14883135
申請人：WIN Semiconductors Corp.
主分類號：H01L25/065
所在地：Kuei Shan Hsiang, Tao Yuan Shien
A stacked structure comprises a semiconductor chip which includes a substrate having at least one substrate via hole penetrating through the substrate...
專利號：US14786295
申請人：SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
主分類號：H01L23/36
所在地：Tokyo
A semiconductor module according to one embodiment of the present invention includes: a first circuit board having thermal conductivity; a second circ...
專利號：US15186624
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L25/065
所在地：Hsin-Chu
A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first di...