專利號(hào)：US13883466
申請(qǐng)人：Chan-Woong Park
主分類號(hào)：H01F27/28
所在地：Seoul
The present invention relates to a transmitter and power supply which suffers little EMI deviation and provides adequate margin even in volume product...
專利號(hào)：US14705886
申請(qǐng)人：SAMSUNG ELECTRO-MECHANICS CO., LTD.
主分類號(hào)：H01F27/24
所在地：Suwon-Si, Gyeonggi-Do
There is provided a chip electronic component including; a magnetic body containing magnetic metal powder; an internal coil part embedded in the magne...
專利號(hào)：US14176171
申請(qǐng)人：TEXAS INSTRUMENTS DEUTSCHLAND GMBH
主分類號(hào)：H01F13/00
所在地：Freising
Automated degaussing methods and apparatus are presented for degaussing a magnetic core in close loop fashion, in which a plurality of pulses are appl...
專利號(hào)：US14917163
申請(qǐng)人：SCHNEIDER ELECTRIC INDUSTRIES SAS
主分類號(hào)：H01F7/127
所在地：Rueil-Malmaison
An electromagnetic actuator, including: a ferromagnetic housing extending in a longitudinal direction with a height in a vertical direction perpendicu...
專利號(hào)：US14742888
申請(qǐng)人：REMY TECHNOLOGIES, L.L.C.
主分類號(hào)：F02N11/04
所在地：IN Pendleton
A motor vehicle solenoid including a solenoid housing, at least one coil arranged in the housing, and at least one diode holder arranged in the housin...
專利號(hào)：US14887983
申請(qǐng)人：Hitachi, Ltd.
主分類號(hào)：H01F6/04
所在地：Chiyoda-ku, Tokyo
Provided superconducting magnet allowing the temperature of the permanent current switch to be quickly lowered and the excitation time of the supercon...
專利號(hào)：US14754799
申請(qǐng)人：STMICROELECTRONICS S.R.L.
主分類號(hào)：H03L5/00
所在地：Agrate Brianza
An integrated circuit (IC) may include a semiconductor substrate, and a semiconductor resistor. The semiconductor resistor may include a well in the s...
專利號(hào)：US14472650
申請(qǐng)人：ROHM CO., LTD.
主分類號(hào)：H01C10/00
所在地：Kyoto-shi, Kyoto
A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portio...
專利號(hào)：US14407502
申請(qǐng)人：Jo?o Martins Neto
主分類號(hào)：H01B17/58
所在地：Centenário Duque de Caxias/RJ
The cable gland with pressure indicator of the present invention comprehends a scale (12) disposed on the sleeve (5) that fits in a body (4), the refe...
專利號(hào)：US14804237
申請(qǐng)人：Hjortur Erlendsson
主分類號(hào)：G02B6/44
所在地：Kopavogur
A production method for a headline sonar cable (20, 120) that exhibits a high breaking-strength and lighter weight than a conventional steel headline ...
專利號(hào)：US14403589
申請(qǐng)人：DOW CORNING TORAY CO., LTD.
主分類號(hào)：H01B1/24
所在地：Chiyoda-Ku
A room temperature-curable electrically conductive fluorosilicone rubber composition comprises: (A) a fluoropolysiloxane capped at the molecular termi...
專利號(hào)：US14769554
申請(qǐng)人：3M INNOVATIVE PROPERTIES COMPANY
主分類號(hào)：H01B1/22
所在地：MN St. Paul
Polymer composites that are suitable for use as electromagnetic interference mitigaters include a lossy polymeric matrix, ceramic particles dispersed ...
專利號(hào)：US14748954
申請(qǐng)人：Enerage Inc.
主分類號(hào)：H01B1/04
所在地：Yilan County
The present invention discloses a composite structure of graphene and carbon nanotube and a method of manufacturing the same. The composite structure ...
專利號(hào)：US13984334
申請(qǐng)人：Gen-ichi Katagiri
主分類號(hào)：H01L21/00
所在地：Yokohama
Provided is an ion exchange resin volume reduction apparatus in which the ignition of plasma is facilitated and the plasma is prevented from extinguis...
專利號(hào)：US14350878
申請(qǐng)人：Gettinge La Calhene
主分類號(hào)：E05B65/00
所在地：Vendome
A control mechanism for a device for the sealed transfer between a chamber and a container, affording a very high level of safety, comprising bolts ab...
專利號(hào)：US15363093
申請(qǐng)人：UT-Battelle, LLC
主分類號(hào)：G21F5/012
所在地：TN Oak Ridge
An integrated storage, transportation and disposal system for used fuel assemblies is provided. The system includes a plurality of sealed canisters an...
專利號(hào)：US14924818
申請(qǐng)人：SK hynix Inc.
主分類號(hào)：G11C29/04
所在地：Icheon-si Gyeonggi-do
A random number generation circuit may include a memory block. The random number generation circuit may include a fuse block configured to store an ad...
專利號(hào)：US14740457
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：G11C29/00
所在地：Suwon-si
Provided is a method for repairing one or more defective memory cells of a semiconductor memory device by a system management interrupt and a basic in...
專利號(hào)：US15291761
申請(qǐng)人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號(hào)：G11C17/00
所在地：Hsin-Chu
A memory device includes: a memory array comprising a plurality of bits, wherein a first bit of the plurality of bits is coupled to a first assist cir...
專利號(hào)：US14470113
申請(qǐng)人：Micron Technology, Inc.
主分類號(hào)：G11C17/16
所在地：ID Boise
A semiconductor device that includes a plurality of memory cells assigned with addresses that are different from each other, a redundant memory cell r...
專利號(hào)：US15393465
申請(qǐng)人：SAMSUNG ELECTRONICS CO., LTD.
主分類號(hào)：G11C16/06
所在地：Suwon-si, Gyeonggi-do
A method for operating a non-volatile memory device initially includes supplying an erase voltage to the memory cells. The memory cells are in cell st...
專利號(hào)：US15087242
申請(qǐng)人：SanDisk Technologies Inc.
主分類號(hào)：G11C13/00
所在地：TX Plano
Techniques are provided for non-volatile storage self-detecting that a heating event has occurred to the non-volatile storage. One example of the heat...
專利號(hào)：US15047113
申請(qǐng)人：Western Digital Technologies, Inc.
主分類號(hào)：G11C16/04
所在地：CA Irvine
The present disclosure relates to apparatus, systems, and methods that address the migration of least significant in memory cells due to inter-cell in...
專利號(hào)：US15069287
申請(qǐng)人：SanDisk Technologies LLC
主分類號(hào)：G11C16/06
所在地：TX Plano
Reduced errors when sensing non-volatile memory are provided by applying a current spike or preconditioning current for a group of memory cells includ...
專利號(hào)：US15173874
申請(qǐng)人：SK hynix Inc.
主分類號(hào)：G11C16/04
所在地：Icheon-si, Gyeonggi-do
Provided herein are a semiconductor memory device and an operating method thereof. The semiconductor memory device may include: drain select transisto...
專利號(hào)：US15349751
申請(qǐng)人：Innodisk Corporation
主分類號(hào)：G11C16/04
所在地：New Taipei
A flash memory device. The flash memory device comprises a controller, a plurality of flash memories, and a voltage control circuit. The voltage contr...
專利號(hào)：US14583624
申請(qǐng)人：Intel Corporation
主分類號(hào)：G11C7/10
所在地：CA Santa Clara
Method, system and apparatus for detecting voltage ramping to a target voltage level in steady state, comprising, ramping a regulated voltage to a ste...
專利號(hào)：US13830135
申請(qǐng)人：MOSAID TECHNOLOGIES INCORPORATED
主分類號(hào)：G11C16/06
所在地：Ottawa
A non-volatile memory device using existing row decoding circuitry to selectively provide a global erase voltage to at least one selected memory block...
專利號(hào)：US14990125
申請(qǐng)人：GLOBALFOUNDRIES INC.
主分類號(hào)：G11C7/00
所在地：Grand Cayman
Words of data are maintained in content-addressable memory cells arranged in rows. Two of the rows are timing reference rows, and the remainder of the...
專利號(hào)：US15375046
申請(qǐng)人：Microsemi SoC Corporation
主分類號(hào)：G11C11/00
所在地：CA San Jose
A pair of adjacent ReRAM cells in an array includes a first bit line for a row of the array, a second bit line for the row of the array, a p-channel w...
專利號(hào)：US15209126
申請(qǐng)人：SAMSUNG ELECTRONICS CO., LTD.
主分類號(hào)：G11C11/24
所在地：Suwon-si, Gyeonggi-do
A method of operating a memory device includes writing cell data having one of at least three states to a memory cell; amplifying a voltage level of a...
專利號(hào)：US15207531
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：G11C29/00
所在地：NY Armonk
A memory cell that is readable through a bit line and addressable through a word line can be stressed using a method that includes addressing the memo...
專利號(hào)：US14940073
申請(qǐng)人：Intel Corporation
主分類號(hào)：G11C7/10
所在地：CA Santa Clara
Techniques and mechanisms to provide write access to a memory device. In an embodiment, a memory controller sends commands to a memory device which co...
專利號(hào)：US15393149
申請(qǐng)人：Micron Technology, Inc.
主分類號(hào)：G11C11/4076
所在地：ID Boise
A device includes a first data terminal, a second data terminal, a first switching buffer coupled between a data node and the first data terminal and ...
專利號(hào)：US15224683
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：G11C7/00
所在地：Suwon-si
Provided is a method of refreshing a memory device by controlling a self-refresh cycle according to temperature. In the method, first self-refresh and...
專利號(hào)：US14985259
申請(qǐng)人：Simon Peter Tsaoussis
主分類號(hào)：G11C11/34
所在地：FL Miami
A two transistor ternary random access memory (TTTRAM) circuit includes an voltage/current input, an input/output switch, a first transistor, a first ...
專利號(hào)：US14926966
申請(qǐng)人：KABUSHIK KAISHA TOSHIBA
主分類號(hào)：G11B5/31
所在地：Tokyo
According to one embodiment, a magnetic recording apparatus includes a spin-torque oscillator, a recording unit, and a controller. The spin-torque osc...
專利號(hào)：US14700015
申請(qǐng)人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號(hào)：G11C11/00
所在地：NY Armonk
Thermal-spin-torque (TST) in a magnetic tunnel junction (MTJ) is demonstrated by generating large temperature gradients across ultrathin MgO tunnel ba...
專利號(hào)：US15168254
申請(qǐng)人：RIKEN
主分類號(hào)：G11C19/08
所在地：Saitama
To provide a magnetic element that controls generation and annihilation of a skyrmion. A magnetic element is provided, and the magnetic element compri...
專利號(hào)：US15251053
申請(qǐng)人：SK hynix Inc.
主分類號(hào)：G11C8/00
所在地：Icheon-si, Gyeonggi-do
A semiconductor memory apparatus includes a first mat, a second mat, a column driver, and a connection circuit. The first mat may include a first mat ...
專利號(hào)：US15360675
申請(qǐng)人：Intel Corporation
主分類號(hào)：G06F12/00
所在地：CA Santa Clara
Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives i...
專利號(hào)：US15179338
申請(qǐng)人：Micron Technology, Inc.
主分類號(hào)：G11C7/08
所在地：ID Boise
Examples of the present disclosure provide apparatuses and methods for simulating access lines in a memory. An example method can include receiving a ...
專利號(hào)：US14964414
申請(qǐng)人：HGST Netherlands B.V.
主分類號(hào)：G11B33/14
所在地：Amsterdam
A hermetically-sealed hard disk drive (HDD) utilizes a laminated film seal to seal an interface of an electrical flexible cable assembly and an HDD en...
專利號(hào)：US14868454
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H04N5/93
所在地：NY Armonk
A method for generating a consolidated video includes receiving a user indicated path of interest on an electronic map, determining geographical coord...
專利號(hào)：US14728861
申請(qǐng)人：Adobe Systems Incorporated
主分類號(hào)：H04N5/235
所在地：CA San Jose
Audio capture techniques on mobile client devices are described. In one or more implementations, techniques are described for leveraging availability ...
專利號(hào)：US14640154
申請(qǐng)人：Sony Corporation
主分類號(hào)：G11B23/107
所在地：Tokyo
A magnetic tape cartridge includes a reel that is capable of winding a magnetic tape thereonto, a cartridge main body that is capable of accommodating...
專利號(hào)：US15052115
申請(qǐng)人：FUJIFILM Corporation
主分類號(hào)：G11B5/735
所在地：Tokyo
The magnetic tape has on one surface of a nonmagnetic support a magnetic layer containing ferromagnetic powder and binder, and on the other surface of...
專利號(hào)：US14733174
申請(qǐng)人：HOYA CORPORATION; HOYA GLASS DISK (THAILAND) LTD.
主分類號(hào)：G11B5/73
所在地：Shinjuku-ku, Tokyo
With regard to a glass substrate 1 according to the present invention, a value of an amendment concentricity AC that has taken into consideration Sk a...
專利號(hào)：US15072550
申請(qǐng)人：FUJIFILM Corporation
主分類號(hào)：G11B5/706
所在地：Tokyo
The magnetic tape includes a magnetic layer containing ferromagnetic hexagonal ferrite powder, abrasive, and binder on a nonmagnetic support, wherein ...
專利號(hào)：US15199892
申請(qǐng)人：HGST Netherlands B.V.
主分類號(hào)：G11B5/54
所在地：Amsterdam
An actuator rotational limiter mechanism for a multiple disk-stack, shared actuator hard disk drive includes an actuator comb with a protruding pin, w...