專利號(hào)：US15335554
申請(qǐng)人：Japan Display Inc.
主分類號(hào)：H01L51/52
所在地：Tokyo
The organic electroluminescence display device of an embodiment of the present invention includes a substrate, a plurality of pixels formed on the sub...
專利號(hào)：US15462944
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：H01L51/54
所在地：Atsugi-shi, Kanagawa-ken
An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present inv...
專利號(hào)：US15490290
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：H01L51/50
所在地：Kanagawa-ken
A light-emitting element of the present invention can have sufficiently high emission efficiency with a structure including a host material being able...
專利號(hào)：US15218928
申請(qǐng)人：LG Display Co., Ltd.
主分類號(hào)：H01L51/00
所在地：Seoul
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border ...
專利號(hào)：US14378529
申請(qǐng)人：Merck Patent GmbH
主分類號(hào)：C07D279/22
所在地：Darmstadt
Spirobifluroene compounds of the formula (1) which are suitable for use in electronic devices, and in particular organic electroluminescent devices, a...
專利號(hào)：US14432690
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H01L51/00
所在地：Tokyo
A novel organic compound having high stability is provided. The organic compound is represented by Formula (1) described in claim 1: In Formula (1), R...
專利號(hào)：US15043956
申請(qǐng)人：Flexterra, Inc.
主分類號(hào)：C07D487/06
所在地：IL Skokie
The present invention relates to new semiconductor materials prepared from perylene-based compounds. Such compounds can exhibit high carrier mobility ...
專利號(hào)：US14091163
申請(qǐng)人：Cambridge Display Technology; Sumitomo Chemical Company Limited
主分類號(hào)：H01L51/00
所在地：Cambridgeshire
A polymer comprising repeat units of formula (I) and one or more co-repeat units: Ar1 in each occurrence independently represent an aryl or heteroaryl...
專利號(hào)：US14766888
申請(qǐng)人：Fraunhofer Gesellschaft Zur F?rderung Der Angew. Forschung E.V.
主分類號(hào)：H01L49/00
所在地：München
The invention relates to a radiation source, comprising at least one semiconductor substrate, on which at least two field-effect transistors are forme...
專利號(hào)：US15165322
申請(qǐng)人：Allegro Microsystems, LLC
主分類號(hào)：G11B5/39
所在地：MA Worcester
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half...
專利號(hào)：US14093462
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：G01R33/02
所在地：Neubiberg
An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field se...
專利號(hào)：US14418947
申請(qǐng)人：ETO MAGNETIC GMBH
主分類號(hào)：H01L41/12
所在地：Stockach
An actuator device having an expansion unit (10), which comprises a magnetically active shape memory alloy material (12) and which carries out an expa...
專利號(hào)：US14400912
申請(qǐng)人：KYOCERA Corporation
主分類號(hào)：H01L41/047
所在地：Kyoto-shi, Kyoto
There are provided a piezoelectric element in which the peeling of a surface electrode is suppressed, and a piezoelectric vibrating device, a portable...
專利號(hào)：US13846211
申請(qǐng)人：INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
主分類號(hào)：H01L35/30
所在地：Hsinchu
The disclosure provides a thermoelectric conversion structure and its use in heat dissipation device. The thermoelectric conversion structure includes...
專利號(hào)：US14982013
申請(qǐng)人：LG INNOTEK CO., LTD.
主分類號(hào)：H01L33/64
所在地：Seoul
A light emitting device package is disclosed. The light emitting device package includes a package body, a heat radiating member disposed in the packa...
專利號(hào)：US15187053
申請(qǐng)人：LG INNOTEK CO., LTD.
主分類號(hào)：H01L33/00
所在地：Seoul
A light emitting device includes a substrate, a plurality of light emitting cells disposed on the substrate to be spaced apart from each other, and a ...
專利號(hào)：US14249048
申請(qǐng)人：LG INNOTEK CO., LTD.
主分類號(hào)：H01L33/62
所在地：Seoul
A light emitting device improves light extraction efficiency and may be individually driven in a light emitting device package and/or a light unit. Th...
專利號(hào)：US15153465
申請(qǐng)人：NICHIA CORPORATION
主分類號(hào)：H01L29/22
所在地：Anan-shi, Tokushima
A light-emitting element includes: a light transmissive substrate having a first main surface, a second main surfaces, a first lateral surface, a seco...
專利號(hào)：US14236584
申請(qǐng)人：Masamichi Ishihara; Kenshu Oyama; Shoji Murakami; Hitonobu Onosaka
主分類號(hào)：H01L33/60
所在地：Kitakyushu
A semiconductor device includes an electrical insulating layer with superior heat resistance, heat dissipation, and durability, and which is manufactu...
專利號(hào)：US15027106
申請(qǐng)人：Soko Kagaku Co., Ltd.
主分類號(hào)：H01L33/24
所在地：Ishikawa
There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet...
專利號(hào)：US15511909
申請(qǐng)人：SUMITOMO CHEMICAL COMPANY, LIMITED
主分類號(hào)：H01L21/00
所在地：Tokyo
There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer in a thickne...
專利號(hào)：US15352921
申請(qǐng)人：International Business Machines Corporation
主分類號(hào)：H01L31/173
所在地：NY Armonk
In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plu...
專利號(hào)：US14291007
申請(qǐng)人：Klaus Y. J. Hsu; WISPRO TECHNOLOGY CONSULTING CORPORATION LIMITED
主分類號(hào)：H01L31/10
所在地：Hsinchu
A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the ...
專利號(hào)：US15198788
申請(qǐng)人：SAMSUNG ELECTRONICS CO., LTD.
主分類號(hào)：H01L31/0232
所在地：Suwon-si
Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive la...
專利號(hào)：US13748999
申請(qǐng)人：Allegro Microsystems, LLC
主分類號(hào)：G01R33/06
所在地：MA Worcester
A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a ...
專利號(hào)：US14505002
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：H01L29/786
所在地：Atsugi-shi, Kanagawa-ken
In a semiconductor device including an oxide semiconductor film, defects in the oxide semiconductor film are reduced. In addition, the electrical char...
專利號(hào)：US14478915
申請(qǐng)人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
主分類號(hào)：H01L29/78
所在地：Hsinchu
A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a me...
專利號(hào)：US15393812
申請(qǐng)人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
主分類號(hào)：H01L21/336
所在地：Hsinchu
A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain struct...
專利號(hào)：US14788522
申請(qǐng)人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號(hào)：H01L29/78
所在地：Hsinchu
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The l...
專利號(hào)：US14882411
申請(qǐng)人：ROHM CO., LTD.
主分類號(hào)：H01L29/78
所在地：Kyoto
A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the se...
專利號(hào)：US15236726
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L29/66
所在地：Suwon-si, Gyeonggi-do
Provided are a semiconductor device and a method of fabricating the same. The method comprises forming an active fin extending along a first direction...
專利號(hào)：US14142410
申請(qǐng)人：Renesas Electronics Corporation; International Business Machines Corporation
主分類號(hào)：H01L29/66
所在地：Kawasaki-shi
A method of manufacturing a semiconductor device includes forming a plurality of fin structures on a substrate, the plurality of fin structures includ...
專利號(hào)：US15000786
申請(qǐng)人：Kabushiki Kaisha Toshiba
主分類號(hào)：H01L29/66
所在地：Minato-ku, Tokyo
According to one embodiment, a method for manufacturing a semiconductor device comprises making a first opening, ion-implanting an impurity of a secon...
專利號(hào)：US14528044
申請(qǐng)人：City University of Hong Kong
主分類號(hào)：H01L29/06
所在地：Kowloon
An electronic device for data storage and a method of producing an electronic device for data storage includes a memory storage element arranged to re...
專利號(hào)：US15251210
申請(qǐng)人：Acorn Technologies, Inc.
主分類號(hào)：H01L29/45
所在地：CA La Jolla
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
專利號(hào)：US14395338
申請(qǐng)人：Enkris Semiconductor, Inc.
主分類號(hào)：H01L29/778
所在地：Jiangsu
An enhanced switch device and a manufacturing method therefor. The method comprises: providing a substrate, and forming a nitride transistor structure...
專利號(hào)：US14962003
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L29/423
所在地：Suwon-si, Gyeonggi-do
Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least f...
專利號(hào)：US14955299
申請(qǐng)人：Infineon Technologies Americas Corp.
主分類號(hào)：H01L29/423
所在地：CA El Segundo
A semiconductor structure includes a semiconductor substrate having a gate electrode in a gate trench, a buried bus in the semiconductor substrate, th...
專利號(hào)：US15215845
申請(qǐng)人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號(hào)：H01L29/45
所在地：Hsin-Chu
The present disclosure relate to a method to an integrated chip having a source/drain self-aligned contact to a transistor or other semiconductor devi...
專利號(hào)：US14838958
申請(qǐng)人：HRL Laboratories, LLC
主分類號(hào)：H01L29/15
所在地：CA Malibu
A field effect transistor includes a III-Nitride channel layer, a III-Nitride doped cap layer on the channel layer, a source electrode in contact with...
專利號(hào)：US15287286
申請(qǐng)人：Sony Corporation
主分類號(hào)：H01L27/32
所在地：Tokyo
A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer incl...
專利號(hào)：US15033746
申請(qǐng)人：JOLED INC.
主分類號(hào)：H01L27/32
所在地：Tokyo
A display panel including: a substrate; and a plurality of line banks arranged along a specific direction on the substrate, wherein the line banks are...
專利號(hào)：US15150441
申請(qǐng)人：HannStar Display (Nanjing) Corporation; HannStar Display Corporation
主分類號(hào)：H01L29/08
所在地：Nanjing
An annular display device includes a display module, a touch module and a flexible circuit board. The display module includes a first flexible substra...
專利號(hào)：US14559730
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：G06F3/041
所在地：Yongin
A light emitting display device including a light emitting display panel including light emitting areas, a non-light emitting area disposed adjacent t...
專利號(hào)：US15227493
申請(qǐng)人：TOSHIBA MEMORY CORPORATION
主分類號(hào)：H01L27/24
所在地：Minato-ku, Tokyo
A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiri...
專利號(hào)：US15268847
申請(qǐng)人：SK hynix Inc.
主分類號(hào)：H01L27/24
所在地：Icheon-Si
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor mem...
專利號(hào)：US15221505
申請(qǐng)人：Avalanche Technology, Inc.
主分類號(hào)：H01L45/00
所在地：CA Fremont
The present invention is directed to a memory device including a memory cell coupled to two wiring lines at two ends thereof. The memory cell includes...
專利號(hào)：US15220805
申請(qǐng)人：TOSHIBA MEMORY CORPORATION
主分類號(hào)：G11C11/00
所在地：Minato-ku, Tokyo
According to one embodiment, a semiconductor device includes a variable resistance circuit having first and second resistance elements connected in se...
專利號(hào)：US15133129
申請(qǐng)人：SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
主分類號(hào)：H01L27/146
所在地：AZ Phoenix
An image sensor may include a plurality of pixels that each contain a photodiode. The pixels may include deep photodiodes for near infrared applicatio...
專利號(hào)：US15383924
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L27/14
所在地：Hsin-Chu
An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed o...