專利號(hào)：US15452008
申請(qǐng)人：PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
主分類號(hào)：H01L33/10
所在地：Osaka
A light emitting device is provided. The light emitting device includes a substrate and a plurality of light emitting elements disposed on a major sur...
專利號(hào)：US15284369
申請(qǐng)人：Oculus VR, LLC
主分類號(hào)：H01L29/15
所在地：CA Menlo Park
A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portio...
專利號(hào)：US14685123
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L27/146
所在地：Hsin-Chu
A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an inte...
專利號(hào)：US14248948
申請(qǐng)人：Sony Corporation
主分類號(hào)：H01L27/146
所在地：Tokyo
A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is forme...
專利號(hào)：US14579910
申請(qǐng)人：Google Inc.
主分類號(hào)：H04N13/02
所在地：CA Mountain View
An apparatus is described that includes an image sensor and a light source driver circuit having configuration register space to receive information p...
專利號(hào)：US15257665
申請(qǐng)人：SONY CORPORATION
主分類號(hào)：H01L27/146
所在地：Tokyo
The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more re...
專利號(hào)：US15169994
申請(qǐng)人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號(hào)：H01L31/062
所在地：Hsin-Chu
The present disclosure relates to a method the present disclosure relates to an integrated chip having an active pixel sensor with a gate dielectric p...
專利號(hào)：US14811610
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H04N5/335
所在地：Tokyo
A photoelectric transducer includes a wiring structure and a photoelectric conversion section provided on a substrate. The photoelectric conversion se...
專利號(hào)：US15308991
申請(qǐng)人：BOE Technology Group Co., Ltd.
主分類號(hào)：H01L27/12
所在地：Beijing
A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an ac...
專利號(hào)：US14867430
申請(qǐng)人：Panasonic Liquid Crystal Display Co., Ltd.
主分類號(hào)：H01L27/14
所在地：Himeji-shi, Hyogo
Provided is a display device, including: a plurality of gate lines extending in a first direction; a plurality of source lines extending in a second d...
專利號(hào)：US15250185
申請(qǐng)人：SANDISK TECHNOLOGIES LLC
主分類號(hào)：H01L21/00
所在地：TX Plano
A memory opening can be formed through an alternating stack of insulating layers and sacrificial material layers provided over a substrate. Annular et...
專利號(hào)：US14660023
申請(qǐng)人：SANDISK TECHNOLOGIES INC.
主分類號(hào)：H01L29/792
所在地：TX Plano
A monolithic three-dimensional memory device includes a plurality of memory stack structures arranged in a hexagonal lattice and located over a substr...
專利號(hào)：US15132326
申請(qǐng)人：Regents of the University of Minnesota
主分類號(hào)：H01L21/00
所在地：MN Minneapolis
Capacitors that can be formed fully on an integrated circuit (IC) chip are described in this disclosure. An IC chip includes a metal-oxide-silicone (M...
專利號(hào)：US15199934
申請(qǐng)人：Kilopass Technology, Inc.
主分類號(hào)：H01L29/74
所在地：CA San Jose
Methods and systems for reducing electrical disturb effects between thyristor memory cells in a memory array are provided. Electrical disturb effects ...
專利號(hào)：US15431334
申請(qǐng)人：GLOBALFOUNDRIES Inc.
主分類號(hào)：H01L27/092
所在地：Grand Cayman
A method for forming a self-aligned sacrificial epitaxial cap for trench silicide and the resulting device are provided. Embodiments include forming a...
專利號(hào)：US15336248
申請(qǐng)人：Texas Instruments Incorporated
主分類號(hào)：H01L27/092
所在地：TX Dallas
An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap bet...
專利號(hào)：US15006265
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L23/522
所在地：Suwon-Si, Gyeonggi-do
A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wir...
專利號(hào)：US15158459
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L21/02
所在地：Suwon-si, Gyeonggi-do
A nanosheet field effect transistor design in which the threshold voltage is adjustable by adjusting the composition of the gate. The channel of the n...
專利號(hào)：US15013393
申請(qǐng)人：GLOBALFOUNDRIES INC.
主分類號(hào)：H01L29/737
所在地：Grand Cayman
Device structures and fabrication methods for a device structure. One or more trench isolation regions are formed in a substrate to surround a device ...
專利號(hào)：US15085534
申請(qǐng)人：TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
主分類號(hào)：H01L29/76
所在地：KY Erlanger
An electronics apparatus including a first substrate having a first surface and a second surface, a first switch connected to a second switch and sold...
專利號(hào)：US15402952
申請(qǐng)人：SOCIONEXT INC.
主分類號(hào)：H01L27/02
所在地：Kanagawa
In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode p...
專利號(hào)：US14514066
申請(qǐng)人：Texas Instruments Incorporated
主分類號(hào)：H02H9/04
所在地：TX Dallas
An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integra...
專利號(hào)：US14978882
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：H01L21/20
所在地：Neubiberg
The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n juncti...
專利號(hào)：US15039083
申請(qǐng)人：AOI Electronics Co., Ltd.
主分類號(hào)：H01L31/02
所在地：Takamatsu-shi, Kagawa
A semiconductor device includes: a connection terminal; a semiconductor chip having an electrode pad on one surface; a wire that connects the connecti...
專利號(hào)：US14902504
申請(qǐng)人：ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG
主分類號(hào)：H01L23/48
所在地：Fridolfing
A die interconnect system having a first die with a plurality of connection pads, and a ribbon lead extending from the first die, the ribbon lead havi...
專利號(hào)：US15273151
申請(qǐng)人：LAPIS SEMICONDUCTOR CO., LTD.
主分類號(hào)：H01L23/544
所在地：Kanagawa
The present disclosure provides a semiconductor device including: a substrate including, in a central portion the substrate, n first element formation...
專利號(hào)：US15235404
申請(qǐng)人：Kabushiki Kaisha Toshiba
主分類號(hào)：H01L23/64
所在地：Minato-ku
A semiconductor device of an embodiment includes a first electrode, a second electrode facing the first electrode, an alternating-current electrode, a...
專利號(hào)：US15280175
申請(qǐng)人：Invensas Corporation
主分類號(hào)：H01L23/12
所在地：CA San Jose
Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top...
專利號(hào)：US14833420
申請(qǐng)人：TOSHIBA MEMORY CORPORATION
主分類號(hào)：H01L21/67
所在地：Minato-ku
A manufacturing method of a semiconductor device that can reduce warpage during wafer processing. The method includes forming a first guard ring aroun...
專利號(hào)：US14849061
申請(qǐng)人：Toshiba Memory Corporation
主分類號(hào)：H01L29/10
所在地：Minato-ku
According to an embodiment, a semiconductor memory device comprises: a memory string comprising a plurality of memory cells connected in series therei...
專利號(hào)：US14587019
申請(qǐng)人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號(hào)：H01L21/768
所在地：Hsin-Chu
In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a w...
專利號(hào)：US14867341
申請(qǐng)人：GLOBALFOUNDRIES Inc.
主分類號(hào)：H01L23/52
所在地：Grand Cayman
Programmable via devices and fabrication methods thereof are presented. The programmable via devices include, for instance, a first metal layer and a ...
專利號(hào)：US15157033
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L23/522
所在地：Hsin-Chu
Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includ...
專利號(hào)：US15359611
申請(qǐng)人：Renesas Electronics Corporation
主分類號(hào)：H01L23/28
所在地：Koutou-ku, Tokyo
A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of...
專利號(hào)：US14673347
申請(qǐng)人：Microchip Technology Incorporated
主分類號(hào)：H01L23/495
所在地：AZ Chandler
A semiconductor power chip has a semiconductor power device formed on a semiconductor die; wherein the semiconductor power device comprises an array o...
專利號(hào)：US14911661
申請(qǐng)人：MITSUBISHI ELECTRIC CORPORATION
主分類號(hào)：H01L23/473
所在地：Chiyoda-ku, Tokyo
In a semiconductor module of the invention, a heat sink has a convex portion in which a convex plane has an area smaller than a joint area to the join...
專利號(hào)：US14753797
申請(qǐng)人：Infineon Technologies AG
主分類號(hào)：H01L23/34
所在地：Neubiberg
An electrically conductive element includes an electrically conductive material and a plurality of inclusions of a phase change material. The phase ch...
專利號(hào)：US15466495
申請(qǐng)人：Xilinx, Inc.
主分類號(hào)：H01L23/12
所在地：CA San Jose
Methods and apparatus are described for heat management in an integrated circuit (IC) package using a device with a textured surface having multiple g...
專利號(hào)：US14621440
申請(qǐng)人：Ju-Youn Kim; Ji-Hwan An; Kwang-Yul Lee; Tae-Won Ha; Jeong-Nam Han
主分類號(hào)：H01L21/8234
所在地：Suwon-si
A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are...
專利號(hào)：US14460469
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H01L21/8234
所在地：Hsin-Chu
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes forming pre-tuned-work-function (preTWF) layer over ...
專利號(hào)：US15286117
申請(qǐng)人：GLOBALFOUNDRIES Inc.
主分類號(hào)：H01L21/8234
所在地：Grand Cayman
One illustrative method disclosed includes, among other things, forming a plurality of gates above a substrate, each of the gates comprising a gate st...
專利號(hào)：US15450828
申請(qǐng)人：DISCO CORPORATION
主分類號(hào)：H01L21/00
所在地：Tokyo
Disclosed herein is a wafer processing method including a cover plate providing step of providing a cover plate on the front side of a wafer to thereb...
專利號(hào)：US15280239
申請(qǐng)人：HITACHI KOKUSAI ELECTRIC INC.
主分類號(hào)：H01L21/768
所在地：Tokyo
A method of manufacturing a semiconductor device includes providing a substrate having an insulating film and a plurality of conductive films on a sur...
專利號(hào)：US14713603
申請(qǐng)人：Semiconductor Components Industries, LLC
主分類號(hào)：H01L21/308
所在地：AZ Phoenix
An electronic device can include one or more trenches that include a material that defines one or more voids. In an embodiment, the substrate defines ...
專利號(hào)：US15353984
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H01L21/00
所在地：Suwon-si
A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer inclu...
專利號(hào)：US14715830
申請(qǐng)人：RF Micro Devices, Inc.
主分類號(hào)：H01L21/00
所在地：NC Greensboro
A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a polymer substrate and an interfacial ...
專利號(hào)：US15105597
申請(qǐng)人：3M INNOVATIVE PROPERTIES COMPANY
主分類號(hào)：H01L21/683
所在地：MN St. Paul
A member peeling method includes a step for preparing a first member having a first main face and an outer edge thereof and a second member having a s...
專利號(hào)：US15211631
申請(qǐng)人：Chip Solutions, LLC
主分類號(hào)：H01L23/00
所在地：AZ Phoenix
Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The subst...
專利號(hào)：US14825715
申請(qǐng)人：NGK INSULATORS, LTD.
主分類號(hào)：H01L21/683
所在地：Aichi
A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substra...
專利號(hào)：US14613081
申請(qǐng)人：APPLIED Materials, Inc.
主分類號(hào)：H01L21/00
所在地：CA Santa Clara
A wafer processing system has a ring maintenance module for loading wafers into a chuck assembly, and for cleaning and inspecting the chuck assembly u...