專利號(hào)：US17643416
申請(qǐng)人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號(hào)：H10N70/00
所在地：NY Armonk
A phase change memory (PCM) device is provided. The PCM device includes a bottom electrode formed on a substrate, a heater electrode formed on the bot...
專利號(hào)：US18443368
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H10N70/00
所在地：Hsin-Chu
Some embodiments relate to an integrated circuit including one or more memory cells arranged over a semiconductor substrate between an upper metal int...
專利號(hào)：US17878034
申請(qǐng)人：SeeQC Inc.
主分類號(hào)：G11C11/00
所在地：NY Elmsford
A memory cell having a Josephson junction and a magnetic junction situated in a close proximity to the Josephson junction. The two junctions may be ve...
專利號(hào)：US18509125
申請(qǐng)人：University of Houston System
主分類號(hào)：H10N60/01
所在地：TX Houston
A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a supercond...
專利號(hào)：US18355550
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H10N50/80
所在地：Hsinchu
Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a device region, an inner...
專利號(hào)：US17373271
申請(qǐng)人：Robert Bosch GmbH
主分類號(hào)：H01L41/113
所在地：Stuttgart
An ultrasound transducer of a vehicle system includes a support member that attaches to and connects to the bottom portion of a membrane of the ultras...
專利號(hào)：US17593968
申請(qǐng)人：SABIC Global Technologies B.V.
主分類號(hào)：H10N30/092
所在地：Bergen op Zoom
Methods of producing lead-free piezoelectric composites are described. The method can include adding a lead-free piezoelectric additive to a solution ...
專利號(hào)：US17896022
申請(qǐng)人：NIKE, Inc.
主分類號(hào)：H10N19/00
所在地：OR Beaverton
Aspects relate to an energy harvesting device adapted for use by an athlete while exercising. The device may utilize a mass of phase-change material t...
專利號(hào)：US17544866
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H10K85/60
所在地：Gyeonggi-do
A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and ...
專利號(hào)：US17765131
申請(qǐng)人：KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
主分類號(hào)：H10K85/30
所在地：Thuwal
A photodetection device is configured to detect light and the photodetection device includes a substrate having a largest surface; a dielectric formed...
專利號(hào)：US17531382
申請(qǐng)人：OSRAM Opto Semiconductors GmbH
主分類號(hào)：H10K85/10
所在地：Regensburg
A method for preparing a wavelength converting film is disclosed. The method comprising mixing at least one phosphor, a polysiloxane and optionally an...
專利號(hào)：US18523085
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H10K71/00
所在地：Yongin-si
A bonding device includes: a stage and a pressing part, which is placed on the stage and is movable toward the stage. A first layer, which is disposed...
專利號(hào)：US18313513
申請(qǐng)人：Kateeva, Inc.
主分類號(hào)：H10K71/00
所在地：CA Newark
An ink printing process employs per-nozzle droplet volume measurement and processing software that plans droplet combinations to reach specific aggreg...
專利號(hào)：US17687451
申請(qǐng)人：SAMSUNG ELECTRONICS CO., LTD.
主分類號(hào)：H10K59/38
所在地：Suwon-si
A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The ligh...
專利號(hào)：US17391154
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H10K59/38
所在地：Yongin-si
A display device includes: a display panel including a light-emitting element to provide a first light; a light control layer disposed on the display ...
專利號(hào)：US17356425
申請(qǐng)人：WuHan TianMa Micro-electronics CO., LTD.
主分類號(hào)：H10K59/35
所在地：Wuhan
A display panel includes a substrate, sub-pixels, and a black matrix. Each sub-pixel includes a pixel drive circuit and a light-emitting element. The ...
專利號(hào)：US18441694
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H10K59/131
所在地：Yongin-si
A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate in...
專利號(hào)：US17417723
申請(qǐng)人：CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.
主分類號(hào)：H10K59/131
所在地：Sichuan
A display substrate and a display device are provided. The display substrate includes a base substrate, multiple sub-pixels, multiple data lines, a te...
專利號(hào)：US18518926
申請(qǐng)人：SAMSUNG DISPLAY CO., LTD.
主分類號(hào)：H01L29/08
所在地：Yongin-si
A display device includes a display panel including a main area and a sensor area. Sensor devices overlap the sensor area of the display panel in a th...
專利號(hào)：US17503913
申請(qǐng)人：CANON KABUSHIKI KAISHA
主分類號(hào)：H10K59/122
所在地：Tokyo
An electronic device including elements arranged on a substrate, each of the elements including an insulating layer, a first electrode, a functional l...
專利號(hào)：US17444396
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H01L27/32
所在地：Yongin-si
A display device includes a substrate. The substrate includes a display area and a non-display area, and the display area includes an emission area an...
專利號(hào)：US18533282
申請(qǐng)人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號(hào)：H10K50/858
所在地：Atsugi
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixel...
專利號(hào)：US18472797
申請(qǐng)人：Samsung Display Co., Ltd.
主分類號(hào)：H10K50/858
所在地：Yongin-si
Provided is a display apparatus. The display apparatus includes a display module configured to define a display surface on a plane. The display module...
專利號(hào)：US18517929
申請(qǐng)人：Semiconductor Energy Laboratory Co., Ltd.
主分類號(hào)：G09G5/00
所在地：Kanagawa-ken
A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a first element and a second elemen...
專利號(hào)：US17675387
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H10K10/46
所在地：Suwon-si
A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate e...
專利號(hào)：US17546738
申請(qǐng)人：Samsung Display Co., LTD.
主分類號(hào)：H01L27/15
所在地：Yongin-si
A display device includes a pixel, the pixel includes at least one light emitting element including a first end and a second end; a first electrode ov...
專利號(hào)：US18356849
申請(qǐng)人：VueReal Inc.
主分類號(hào)：H01L27/12
所在地：Waterloo
As the pixel density of optoelectronic devices becomes higher, and the size of the optoelectronic devices becomes smaller, the problem of isolating th...
專利號(hào)：US17627311
申請(qǐng)人：Beijing BOE Optoelectronics Technology Co., Ltd.; BOE Technology Group Co., Ltd.
主分類號(hào)：H01L33/62
所在地：Beijing
The present disclosure provides a light-emitting substrate, a backlight source, and a display device. The light-emitting substrate includes: a base su...
專利號(hào)：US17826929
申請(qǐng)人：Nuvoton Technology Corporation Japan
主分類號(hào)：H10H20/854
所在地：Kyoto
A semiconductor device includes: a mounting substrate; a thin cured silicone resin material film above and in contact with the mounting substrate; and...
專利號(hào)：US18905089
申請(qǐng)人：ARTILUX, INC.
主分類號(hào)：H10F30/225
所在地：CA Menlo Park
An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the fi...
專利號(hào)：US17499747
申請(qǐng)人：The United States of America, as represented by the Secretary of the Navy
主分類號(hào)：H10F77/14
所在地：CA San Diego
A differential amplifier includes an unmatched pair, including first quantum dots and second quantum dots, and a matched pair, including first and sec...
專利號(hào)：US17584346
申請(qǐng)人：SHENZHEN ADAPS PHOTONICS TECHNOLOGY CO., LTD.
主分類號(hào)：H10F39/00
所在地：Shenzhen
The present invention is directed to electrical circuits. In a specific embodiment, the present invention provides a Single-Photon Avalanche Detector ...
專利號(hào)：US17774853
申請(qǐng)人：ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
主分類號(hào)：H10D84/00
所在地：Hunan
A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type sub...
專利號(hào)：US17657875
申請(qǐng)人：CHANGXIN MEMORY TECHNOLOGIES, INC.
主分類號(hào)：H10D84/03
所在地：Hefei
A manufacturing method of a semiconductor structure includes the following operations. A substrate is provided, which includes a first N region, a fir...
專利號(hào)：US18415765
申請(qǐng)人：Samsung Electronics Co., Ltd.
主分類號(hào)：H10D62/13
所在地：Suwon-si
A semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the...
專利號(hào)：US17670932
申請(qǐng)人：DB HiTek Co., Ltd.
主分類號(hào)：H01L29/06
所在地：Bucheon-si
A superjunction semiconductor device having a reduced source area and a method of manufacturing the same and, more particularly, to a semiconductor de...
專利號(hào)：US18749576
申請(qǐng)人：Diodes Incorporated
主分類號(hào)：H01L29/861
所在地：TX Plano
A method includes growing an epitaxial layer over a substrate, forming a plurality of gates in the epitaxial layer, forming a source in the epitaxial ...
專利號(hào)：US18603082
申請(qǐng)人：FUJI ELECTRIC CO., LTD.
主分類號(hào)：H01L29/739
所在地：Kanagawa
Provided is a semiconductor device that includes a drift region that is of a first conductivity type and is provided in a semiconductor substrate; a b...
專利號(hào)：US17579147
申請(qǐng)人：WESTERN DIGITAL TECHNOLOGIES, INC.
主分類號(hào)：H10B63/00
所在地：CA San Jose
A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element incl...
專利號(hào)：US18333498
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號(hào)：H10B61/00
所在地：Hsinchu
A semiconductor device including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes a transisto...
專利號(hào)：US18525301
申請(qǐng)人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號(hào)：H10B51/30
所在地：Hsinchu
A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substr...
專利號(hào)：US17748121
申請(qǐng)人：MACRONIX INTERNATIONAL CO., LTD.
主分類號(hào)：H01L27/11578
所在地：Hsinchu
A semiconductor device includes a circuit board, a bottom plate, landing pads, a stack, support pillars, and memory pillars. The circuit board include...
專利號(hào)：US17352239
申請(qǐng)人：YANGTZE MEMORY TECHNOLOGIES CO., LTD.
主分類號(hào)：H10B41/27
所在地：Wuhan
Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structur...
專利號(hào)：US17721658
申請(qǐng)人：Taiwan Semiconductor Manufacturing Company Ltd.
主分類號(hào)：H10B20/25
所在地：Hsinchu
A memory device includes a plurality of memory cells, each of which includes a first transistor, a second transistor, and a resistor operatively coupl...
專利號(hào)：US17310859
申請(qǐng)人：CHANGXIN MEMORY TECHNOLOGIES, INC.
主分類號(hào)：H10B20/20
所在地：Anhui
An anti-fuse unit structure includes a substrate, an anti-fuse device, and a select transistor. The anti-fuse device is formed in the substrate and co...
專利號(hào)：US17698523
申請(qǐng)人：NANYA TECHNOLOGY CORPORATION
主分類號(hào)：H01L25/04
所在地：New Taipei
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a su...
專利號(hào)：US18347985
申請(qǐng)人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號(hào)：H10B10/00
所在地：Hsinchu
A semiconductor device includes a first memory cell and a dummy region adjacent to the first memory cell. The first memory cell includes a first trans...
專利號(hào)：US18034547
申請(qǐng)人：SHANDONG YINGXIN COMPUTER TECHNOLOGIES CO., LTD.
主分類號(hào)：H05K7/20
所在地：Shandong
The present application discloses a heat dissipating and power supply module and a power-supply shelf. The module includes: at least one fan, wherein ...
專利號(hào)：US18045319
申請(qǐng)人：Hella GmbH & Co. KGaA
主分類號(hào)：H05K7/20
所在地：Lippstadt
A heat sink is provided for a power inverter of an electric motor of a vehicle. The heat sink includes a coolant inlet, a coolant outlet, a first cool...
專利號(hào)：US18057829
申請(qǐng)人：Advanced Energy Industries, Inc.
主分類號(hào)：H05K7/20
所在地：CO Denver
A fan assembly comprises first and second fans and a first press fit stabilizer. The first and second fans comprise housings having a plurality of fas...