專利號：US14406267
申請人：Robert Bosch GmbH
主分類號：H01M4/00
所在地：Stuttgart
A method is provided for manufacturing a polyacrylonitrile-sulfur composite material, the polyacrylonitrile-sulfur composite material having an sp2 hy...
專利號：US15523183
申請人：Sanyo Electric Co., Ltd.
主分類號：H01B1/08
所在地：Daito-shi, Osaka
A positive electrode active material for a nonaqueous electrolyte secondary battery which includes a secondary particle of a lithium transition metal ...
專利號：US15066402
申請人：KABUSHIKI KAISHA TOSHIBA
主分類號：H01M4/00
所在地：Minato-ku
In general, according to one embodiment, there is provided an active material. The active material contains a composite oxide having an orthorhombic c...
專利號：US14061168
申請人：KABUSHIKI KAISHA TOSHIBA
主分類號：H01M4/485
所在地：Minato-ku
According to one embodiment, an active material containing a niobium titanium composite oxide is provided. The niobium titanium composite oxide has av...
專利號：US14115224
申請人：Jun Yoshida
主分類號：H01M4/00
所在地：Susono
An object of the present invention is to provide a lithium secondary battery that has a lithium nickel phosphate compound in the positive electrode, i...
專利號：US13956230
申請人：Samsung SDI Co., Ltd.
主分類號：H01M4/134
所在地：Yongin-si, Gyeonggi-do
In an aspect, a negative active material for a rechargeable lithium battery including surface modified silicon oxide particles is disclosed.
專利號：US14647690
申請人：IQ POWER LICENSING AG; Charles Robert Sullivan
主分類號：H01M2/38
所在地：Zug
The invention relates to a battery comprising liquid electrolyte, used in moving vehicles, wherein the battery includes a battery housing comprising s...
專利號：US15585541
申請人：Sony Corporation
主分類號：H01M2/18
所在地：Tokyo
A battery is provided. The battery including a positive electrode that includes a positive electrode current collector and a positive electrode active...
專利號：US14352857
申請人：TEIJIN LIMITED
主分類號：H01M2/16
所在地：Osaka-shi, Osaka
A separator for a non-aqueous secondary battery including a porous substrate, and an adhesive porous layer that is formed on one side or both sides of...
專利號：US14895389
申請人：TOKYO METROPOLITAN UNIVERSITY; 3DOM INC.; TOKYO OHKA KOGYO CO., LTD.
主分類號：H01M10/04
所在地：Tokyo
A method for manufacturing, a secondary battery separator including a porous resin film in which pores have three-dimensionally ordered structure and ...
專利號：US15028315
申請人：NISSAN MOTOR CO., LTD.
主分類號：H01M2/10
所在地：Yokohama-Shi, Kanagawa
A battery including plural unit cells stacked on top of each other in the up-and-down direction is accommodated in a case to constitute each battery m...
專利號：US15003353
申請人：Panasonic Intellectual Property Management Co., Ltd.
主分類號：H01M2/02
所在地：Osaka
A thin pouch battery, which is used as a power source of a portable electronic apparatus, a portable electronic terminal, or the like, includes protru...
專利號：US14340343
申請人：International Business Machines Corporation
主分類號：H01M2/02
所在地：NY Armonk
A battery, comprising a cathode comprising a cathode material in contact with a cathode current collector. The battery also comprises an electrolyte. ...
專利號：US15453477
申請人：Vitro S.A.B. de C.V.
主分類號：H01L51/50
所在地：PA Cheswick
An organic light emitting diode includes a substrate having a surface modification layer. The surface modification layer includes a first film and a s...
專利號：US12601371
申請人：Jiangeng Xue
主分類號：H01L51/40
所在地：FL Gainesville
Embodiments of the invention pertain to the use of alloyed semiconductor nanocrystals for use in solar cells. The use of alloyed semiconductor nanocry...
專利號：US14974142
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L51/00
所在地：Kanagawa-ken
To provide an organometallic complex with high emission efficiency and high heat resistance, which emits yellow green light. The organometallic comple...
專利號：US15677491
申請人：SAMSUNG SDI CO., LTD.; SAMSUNG ELECTRONICS CO., LTD.
主分類號：C07D491/048
所在地：Yongin-si, Gyeonggi-do
Disclosed are a compound for an organic optoelectric device represented by Chemical Formula 1, a composition for an organic optoelectric device, an or...
專利號：US14805941
申請人：LG Display Co., Ltd.
主分類號：H01L51/00
所在地：Seoul
An organic light emitting display device is disclosed. The organic light emitting display device includes at least two light emitting parts each inclu...
專利號：US14890270
申請人：HODOGAYA CHEMICAL CO., LTD.
主分類號：H01L51/54
所在地：Tokyo
Pyrimidine derivatives of the present invention are represented by the following general formula (1), wherein W, X, Y and Z are carbon atoms or nitrog...
專利號：US14437042
申請人：BOE TECHNOLOGY GROUP CO., LTD.; ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.
主分類號：H01L51/00
所在地：Beijing
The present invention discloses an evaporation method and an evaporation device. The evaporation method includes successively providing at least one m...
專利號：US15262403
申請人：Kabushiki Kaisha Toshiba
主分類號：H01L43/10
所在地：Minato-ku
According to one embodiment, a magnetic element includes a first stacked unit and a third ferromagnetic layer. The first stacked unit includes first a...
專利號：US15162594
申請人：GLOBALFOUNDRIES Singapore Pte. Ltd.
主分類號：H01L43/02
所在地：Singapore
Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic s...
專利號：US14493381
申請人：Murata Manufacturing Co., Ltd.
主分類號：H01L41/053
所在地：Nagaokakyo-shi, Kyoto-fu
An elastic wave device includes elastic wave elements, each including a piezoelectric layer directly or indirectly supported by a supporting substrate...
專利號：US15608674
申請人：Anthony Paul Bellezza
主分類號：H01L35/34
所在地：PA Parkesburg
A solderless thermoelectric device is capable of use at higher operating temperatures as compared to conventional low temperature solders thus allowin...
專利號：US15441108
申請人：TOYODA GOSEI CO., LTD.
主分類號：H01L33/00
所在地：Kiyosu-shi
To prevent cracks on a sealing glass or a substrate in a LED package in which a light-emitting device is sealed with a sealing glass. The LED package ...
專利號：US15920415
申請人：Shenzhen China Star Optoelectronics Technology Co., Ltd.
主分類號：H01L33/50
所在地：Shenzhen
The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to for...
專利號：US15619731
申請人：SAMSUNG ELECTRONICS CO., LTD.
主分類號：H01L33/06
所在地：Suwon-si
A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a ...
專利號：US15551285
申請人：Shenzhen China Star Optoelectronics Technology Co., Ltd.
主分類號：H01L33/00
所在地：Shenzhen
The present invention provides a method for manufacturing a color micro LED array substrate, in which a plurality of monochromic micro LED arrays of d...
專利號：US14782773
申請人：KOREA INSTITUTE OF ENERGY RESEARCH
主分類號：H01L31/04
所在地：Daejeon
A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may ...
專利號：US15111975
申請人：FLISOM AG
主分類號：H01L31/18
所在地：Dubendorf
A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 16...
專利號：US14318100
申請人：SUNPOWER CORPORATION
主分類號：H01L31/0224
所在地：CA San Jose
A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. Selective firing of a conductive paste can be used...
專利號：US15632437
申請人：SAMSUNG SDI CO., LTD.
主分類號：H01L21/00
所在地：Yongin-si, Gyeonggi-do
A method of manufacturing a finger electrode for a solar cell, the method including printing a conductive paste on a front surface of a substrate usin...
專利號：US14951554
申請人：Melexis Technologies NV
主分類號：H01L31/02
所在地：Tessenderlo
A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a ...
專利號：US15285357
申請人：MACRONIX International Co., Ltd.
主分類號：H01L27/08
所在地：Hsinchu
A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in ...
專利號：US15464517
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L27/12
所在地：Atsugi-shi, Kanagawa-ken
To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics...
專利號：US15271504
申請人：Samsung Display Co., Ltd.
主分類號：H01L29/10
所在地：Yongin-si
A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced ap...
專利號：US15079684
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/66
所在地：Atsugi-shi, Kanagawa-ken
The semiconductor device includes a first insulating layer; a first oxide semiconductor; a first insulator containing indium, an element M (M is galli...
專利號：US15446322
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L29/78
所在地：Suwon-si, Gyeonggi-do
An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, ...
專利號：US15619923
申請人：International Business Machines Corporation
主分類號：H01L29/78
所在地：NY Armonk
After forming a gate structure over a semiconductor fin that extends upwards from a semiconductor substrate portion, a sigma cavity is formed within t...
專利號：US15002287
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L21/82
所在地：Hsinchu
A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The method includes the step...
專利號：US15230699
申請人：STMicroelectronics SA
主分類號：H01L29/78
所在地：Montrouge
An integrated electronic device includes a semiconductive film above a buried insulating layer that is situated above a supporting substrate. An activ...
專利號：US15112830
申請人：Infineon Technologies Austria AG
主分類號：H03F3/217
所在地：Villach
An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity...
專利號：US15146444
申請人：Magnachip Semiconductor, Ltd.
主分類號：H01L29/66
所在地：Cheongju-si
A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure...
專利號：US15583304
申請人：Commissariat a l'energie atomique et aux energies alternatives
主分類號：H01L29/66
所在地：Paris
A process for fabricating a vertical transistor is provided, including steps of providing a substrate surmounted by a stack of first to third layers m...
專利號：US15479567
申請人：International Business Machines Corporation
主分類號：H01L21/00
所在地：NY Armonk
Embodiments are directed to a method and resulting structures for a semiconductor device having reduced parasitic capacitance. A semiconductor fin is ...
專利號：US15265905
申請人：International Business Machines Corporation
主分類號：H01L29/51
所在地：NY Armonk
Embodiments of the present invention provide methods for fabricating a semiconductor device. One method may include providing a semiconductor substrat...
專利號：US14435610
申請人：BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
主分類號：H01L29/41
所在地：Beijing
Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. ...
專利號：US15406913
申請人：Texas Instruments Incorporated
主分類號：H01L29/40
所在地：TX Dallas
An integrated circuit which includes a field-plated FET is formed by forming a first opening in a layer of oxide mask, exposing an area for a drift re...
專利號：US14284228
申請人：SAMSUNG ELECTRONICS CO., LTD
主分類號：H01L29/15
所在地：Suwon-si
A coated quantum dot and methods of making coated quantum dots are provided.
專利號：US15045759
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L21/336
所在地：NY Armonk
Field effect transistors and methods of forming the same include forming a stack of nanowires of alternating layers of channel material and sacrificia...