專利號：US15607484
申請人：XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
主分類號：H01L33/00
所在地：Xiamen
A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0
專利號：US15608584
申請人：EXCELLENCE OPTO. INC.
主分類號：H01L33/08
所在地：Miaoli County
A wafer substrate, a light emitting diode (LED) light-emitting layer, a circuit layer and an excitation material layer are included. The LED light-emi...
專利號：US15607253
申請人：Unique Materials Co., Ltd.
主分類號：H01L29/06
所在地：Taipei
Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdS...
專利號：US14984246
申請人：Sensor Electronic Technology, Inc.
主分類號：H01L33/00
所在地：SC Columbia
A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting ...
專利號：US14726987
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L23/28
所在地：Kanagawa-ken
A sealed body in which sealing is uniformly performed is provided. A light-emitting module in which sealing is uniformly performed is provided. A meth...
專利號：US15390647
申請人：International Business Machines Corporation
主分類號：H01L31/101
所在地：NY Armonk
Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a ...
專利號：US15150824
申請人：THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
主分類號：H01B1/06
所在地：PA Philadelphia
Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on...
專利號：US15150816
申請人：THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
主分類號：H01B1/06
所在地：PA Philadelphia
Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may ...
專利號：US15406696
申請人：InVisage Technologies, Inc.
主分類號：H01L31/0352
所在地：CA Menlo Park
In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under...
專利號：US14734996
申請人：Space Systems/Loral, LLC
主分類號：H01L31/00
所在地：CA Palo Alto
A photovoltaic solar cell, including an N-side layer proximate to a first planar surface and a P-side layer proximate to a second planar surface that ...
專利號：US14531549
申請人：Applied Materials, Inc.
主分類號：C23C14/35
所在地：CA Santa Clara
A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first porti...
專利號：US15609405
申請人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號：H01L29/786
所在地：Atsugi-shi, Kanagawa-ken
To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The s...
專利號：US15401460
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/786
所在地：Atsugi-shi, Kanagawa-ken
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating ...
專利號：US15616982
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/66
所在地：Atsugi-shi, Kanagawa-ken
Reducing the power consumption of a transistor and stably controlling its threshold value. Providing a transistor comprising a first conductive layer,...
專利號：US15694981
申請人：International Business Machines Corporation
主分類號：H01L29/78
所在地：NY Armonk
Tunneling field-effect transistors including silicon, germanium or silicon germanium channels and III-N source regions are provided for low power oper...
專利號：US15119345
申請人：Intel Corporation
主分類號：H01L29/78
所在地：CA Santa Clara
Aspect ratio trapping (ART) approaches for fabricating vertical semiconductor devices and vertical semiconductor devices fabricated there from are des...
專利號：US15279490
申請人：FUJI ELECTRIC CO., LTD.
主分類號：H01L29/78
所在地：Kawasaki-shi, Kanagawa
A recess where an edge termination region is lower than an active region is disposed on a silicon carbide base body and an n?-type silicon carbide lay...
專利號：US15609081
申請人：Efficient Power Conversion Corporation
主分類號：H01L29/778
所在地：CA El Segundo
A gallium nitride (GaN) transistor which includes two or more insulator semiconductor interface regions (insulators). A first insulator disposed betwe...
專利號：US14392251
申請人：CSMC TECHNOLOGIES FAB1 CO., LTD.
主分類號：H01L29/73
所在地：Jiangsu
A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (...
專利號：US15928563
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L21/00
所在地：NY Armonk
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in the source/drain regions on dielectrically isola...
專利號：US14294266
申請人：MICRON TECHNOLOGY, INC.
主分類號：H01L27/00
所在地：ID Boise
An embodiment of a transistor has a semiconductor fin, a dielectric over the semiconductor fin, a control gate over the dielectric, and source/drains ...
專利號：US14812490
申請人：INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
主分類號：H01L29/66
所在地：Beijing
A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on oppos...
專利號：US15412924
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/28
所在地：Hsin-Chu
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1-X)N (AlGaN) layer over the III-V semiconductor ...
專利號：US15206868
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L29/49
所在地：Suwon-si, Gyeonggi-do
An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet ext...
專利號：US15391186
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L29/24
所在地：Kanagawa-ken
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived fro...
專利號：US15656480
申請人：Intel Corporation
主分類號：H01L27/12
所在地：CA Santa Clara
A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin ...
專利號：US15464931
申請人：Intel Corporation
主分類號：H01L27/108
所在地：CA Santa Clara
A trench comprising a portion of a substrate is formed. A nucleation layer is deposited on the portion of the substrate within the trench. A III-N mat...
專利號：US15592926
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L29/15
所在地：NY Armonk
A method of restricting diffusion of miscible materials across a barrier, including, forming a 2-dimensional material on a substrate surface, wherein ...
專利號：US15652389
申請人：Renesas Electronics Corporation
主分類號：H01L29/66
所在地：Tokyo
A semiconductor device includes: a first-conductivity-type semiconductor substrate serving as a drain layer; a first-conductivity-type epitaxial layer...
專利號：US14777769
申請人：Georgia State University Research Foundation
主分類號：H01L29/00
所在地：GA Atlanta
A processor includes a transistor pair of a first transistor and a second transistor. The first transistor of the transistor pair is coupled to a Spas...
專利號：US15897538
申請人：SEIKO EPSON CORPORATION
主分類號：H01L27/108
所在地：Tokyo
A second data transfer line that is coupled to a gate layer of a drive transistor is formed in a layer higher than the gate layer, and a transfer capa...
專利號：US15483049
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L27/32
所在地：Atsugi-shi, Kanagawa-ken
Providing a light-emitting element emitting light in a broad emission spectrum. A combination of a first organic compound and a second organic compoun...
專利號：US15443663
申請人：SONY CORPORATION
主分類號：H01L27/30
所在地：Tokyo
A solid-state image pickup device includes at least two stacked first and second photoelectric conversion sections in each of a plurality of pixels. S...
專利號：US15261495
申請人：TOYODA GOSEI CO., LTD.
主分類號：H01L33/24
所在地：Kiyosu-shi
To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The...
專利號：US15192816
申請人：SK hynix Inc.
主分類號：H01L31/062
所在地：Gyeonggi-do
An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section includin...
專利號：US15425570
申請人：SAMSUNG ELECTRONICS CO., LTD.
主分類號：H01L27/14
所在地：Suwon-si, Gyeonggi-Do
An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation laye...
專利號：US15363148
申請人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
主分類號：H01L27/146
所在地：Atsugi-shi, Kanagawa-ken
Provided is a semiconductor device that can operate stably. All transistors included in the semiconductor device are transistors each of which contain...
專利號：US15444695
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L27/12
所在地：Atsugi-shi, Kanagawa-ken
Provided is a novel semiconductor device. A switching element, specifically a transistor having a well potential structure is manufactured by utilizin...
專利號：US15834072
申請人：E Ink Holdings Inc.
主分類號：H01L27/12
所在地：Hsinchu
A pixel array substrate includes a display area, signal lines, transmission lines, selection lines, and jumper wires. The selection lines intersect wi...
專利號：US14511070
申請人：Samsung Display Co., Ltd.
主分類號：H01L27/12
所在地：Yongin, Gyeonggi-Do
Display substrates and display devices with reduced electrical resistance are disclosed. One inventive aspect includes a switching device, a first wir...
專利號：US14853783
申請人：INTEL CORPORATION
主分類號：G06F12/00
所在地：CA Santa Clara
A three dimensional memory device is described having an array region and a periphery region. The array region has a three dimensional stack of storag...
專利號：US14622997
申請人：GLOBALFOUNDRIES INC.
主分類號：H01L23/525
所在地：Grand Cayman
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing th...
專利號：US15680960
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L29/06
所在地：Suwon-si, Gyeonggi-do
Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The s...
專利號：US15259472
申請人：GLOBALFOUNDRIES INC.
主分類號：H01L27/11
所在地：Grand Cayman
FinFET structures and methods of forming such structures. The FinFET structures including a substrate; at least two gates disposed on the substrate; a...
專利號：US15459190
申請人：GLOBALFOUNDRIES Singapore Pte. Ltd.
主分類號：H01L27/06
所在地：Singapore
Embodiments of a multi-time programmable (MTP) structure for non-volatile memory cells are presented. The memory cell includes an ultra-thin silicon-o...