專利號：US16279336
申請人：FAIRCHILD SEMICONDUCTOR CORPORATION
主分類號：H01L23/498
所在地：AZ Phoenix
In a general aspect, an apparatus can include a leadframe including a plurality of leads disposed along a single edge of the apparatus. The apparatus ...
專利號：US16680636
申請人：MACRONIX INTERNATIONAL CO., LTD.
主分類號：H01L23/498
所在地：Hsinchu
A multilayer structure includes a substrate and a plurality of sub-stacks extending along a first direction respectively and disposed on an upper surf...
專利號：US15877123
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/56
In an embodiment, a package includes a first package structure including a first integrated circuit die having an active side and a back-side, the act...
專利號：US17001198
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L23/538
所在地：Hsinchu
A package includes a corner, a device die having a front side and a backside, and a molding material molding the device die therein. A plurality of re...
專利號：US16807377
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L23/498
所在地：Suwon-si
A semiconductor package includes a semiconductor chip including a chip pad and an external bump pad electrically connected to the chip pad of the semi...
專利號：US16671699
申請人：ROHM CO., LTD.
主分類號：H01L21/00
所在地：Kyoto
A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, ...
專利號：US16581971
申請人：Texas Instruments Incorporated
主分類號：H01L23/495
所在地：TX Dallas
A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a f...
專利號：US16426381
申請人：FOXCONN (KUNSHAN) COMPUTER CONNECTOR CO., LTD.; FOXCONN INTERCONNECT TECHNOLOGY LIMITED
主分類號：H05K1/18
所在地：Kunshan
An independent loading mechanism for use with a CPU connector includes a metallic frame cooperating with a back plate module to sandwich a printed cir...
專利號：US17019333
申請人：ACTRON TECHNOLOGY CORPORATION
主分類號：H01L23/34
所在地：Taoyuan
A chip packaging structure includes a heat dissipation substrate, a pre-molded chipset, an interconnection and a second encapsulant. The pre-molded ch...
專利號：US16270635
申請人：Toshiba Memory Corporation
主分類號：H01L27/11582
所在地：Minato-ku
A semiconductor memory according to an embodiment includes first and second areas, an active region, a non-active region, a first stacked body, a plur...
專利號：US16669050
申請人：SK hynix Inc.
主分類號：H01L21/66
所在地：Icheon-si
A method of manufacturing a flip chip package includes forming a plurality of semiconductor chips and bonding the semiconductor chips to a package sub...
專利號：US16505360
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L21/00
所在地：Hsinchu
A system includes a factory interface, a deposition tool, and at least one measuring device. The factory interface is configured to carry a wafer. The...
專利號：US16743980
申請人：International Business Machines Corporation
主分類號：H01L21/8238
所在地：NY Armonk
Scalable device designs for FINFET technology are provided. In one aspect, a method of forming a FINFET device includes: patterning fins in a substrat...
專利號：US16787963
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L21/00
所在地：Hsinchu
The present disclosure describes a method of fabricating a semiconductor structure that includes forming a gate structure over a substrate, forming an...
專利號：US16914747
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L21/8234
所在地：Hsinchu
In a method, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial ga...
專利號：US16883486
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L21/8234
所在地：Hsinchu
An embodiment is a method including forming a multi-layer stack over a substrate, the multi-layer stack including alternating first layers and second ...
專利號：US16649890
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L21/8234
所在地：Atsugi
A semiconductor device that can have favorable electrical characteristics and can be highly integrated is provided.The semiconductor device includes a...
專利號：US16744984
申請人：International Business Machines Corporation
主分類號：H01L21/768
所在地：NY Armonk
A method for manufacturing a semiconductor device includes forming an interconnect in a first dielectric layer, and forming a second dielectric layer ...
專利號：US16448315
申請人：International Business Machines Corporation
主分類號：H01L21/768
所在地：NY Armonk
A method of fabricating a semiconductor device includes depositing a spacer material in a trench arranged in a dielectric layer. An end of the trench ...
專利號：US16397811
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/768
所在地：Hsinchu
A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum n...
專利號：US16851167
申請人：International Business Machines Corporation
主分類號：H01L21/768
所在地：NY Armonk
A method of forming an interconnect structure includes forming at least one second-level interconnect in a sacrificial dielectric layer that is formed...
專利號：US16148653
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/768
所在地：Hsinchu
A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer compr...
專利號：US16821373
申請人：International Business Machines Corporation
主分類號：H01L21/00
所在地：NY Armonk
Integrated circuits include back end of line metallization levels. An upper metallization level is on a lower metallization level and includes at leas...
專利號：US16573225
申請人：International Business Machines Corporation
主分類號：H01L21/768
所在地：NY Armonk
Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterni...
專利號：US15930235
申請人：Sony Corporation
主分類號：H01L21/768
所在地：Tokyo
A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer...
專利號：US16794601
申請人：LUMENS CO., LTD.
主分類號：H01L21/687
所在地：Yongin-si
Disclosed is a method for constructing a micro-LED display module. The method includes: retaining micro-LED chips in a matrix on a chip retaining memb...
專利號：US16592556
申請人：RAYTHEON COMPANY
主分類號：H01L21/00
所在地：MA Waltham
A method of transferring an integrated circuit (IC) onto an alternative substrate is provided at a wafer level to enable coefficient of thermal expans...
專利號：US15964576
申請人：Chengdu ESWIN SiP Technology Co., Ltd.
主分類號：B32B43/00
所在地：Chengdu
Disclosed is a thin subject assisted debonding method for separating temporarily bonded workpiece-carrier pair. The thin subject can be a thin wire, o...
專利號：US16555011
申請人：SHINKO ELECTRIC INDUSTRIES CO., LTD.
主分類號：H01L21/683
所在地：Nagano
A ceramics substrate includes: a substrate body; and an electric conductor patient that is provided in the substrate body. The substrate body is made ...
專利號：US16490923
申請人：KYOCERA Corporation
主分類號：H01L21/683
所在地：Kyoto
A sample holder includes an insulating substrate including a ceramic material and having a sample holding surface on one main surface thereof, a heat-...
專利號：US16245448
申請人：EBARA CORPORATION
主分類號：H01L21/67
所在地：Tokyo
A substrate treatment apparatus includes a plurality of treatment chambers performing different treatment types on a substrate; a transfer device; and...
專利號：US16670138
申請人：APPLIED MATERIALS, INC.
主分類號：H01L21/62
所在地：CA Santa Clara
Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comp...
專利號：US16407670
申請人：Applied Materials, Inc.
主分類號：H05B3/68
所在地：CA Santa Clara
Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements dispo...
專利號：US15908466
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L21/56
所在地：Hsinchu
A method includes attaching a first die and a second die to a carrier; forming a molding material between the first die and second die; and forming a ...
專利號：US16925329
申請人：JWL (Zhejiang) Semiconductor Co., Ltd
主分類號：H01L27/146
所在地：Huzhou
A method for packaging a chip and a chip package structure are provided. The method is used to package the chip including an acoustic filter. The pack...
專利號：US16480304
申請人：INSTITUT VEDECOM
主分類號：H01L21/48
所在地：Versailles
The electronic card with printed circuit (1) comprises at least one antenna with slots (AT) including a cavity (15) and a metal conductive layer (17) ...
專利號：US16283570
申請人：TOSHIBA MEMORY CORPORATION
主分類號：H01L21/3065
所在地：Tokyo
A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first por...
專利號：US16690958
申請人：TOKYO ELECTRON LIMITED
主分類號：H01L21/02
所在地：Tokyo
A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystalli...
專利號：US16502172
申請人：INTERNATIONAL BUSINESS MACHINES CORPORATION
主分類號：H01L21/266
所在地：NY Armonk
Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor...
專利號：US16029471
申請人：Novellus Systems, Inc.
主分類號：H01L21/223
所在地：CA Fremont
Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window t...
專利號：US16644150
申請人：Applied Materials, Inc.
主分類號：H01L21/02
所在地：CA Santa Clara
Methods for forming a semiconductor structure including a silicon (Si) containing layer or a silicon germanium (SiGe) layer are provided. The methods ...
專利號：US15986030
申請人：Versum Materials US, LLC
主分類號：H01L21/02
所在地：AZ Tempe
Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing fil...
專利號：US16684313
申請人：STC.UNM
主分類號：H01L21/02
所在地：NM Albuquerque
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a tre...
專利號：US16257174
申請人：SCREEN Holdings Co., Ltd.
主分類號：H01L21/02
所在地：Kyoto
A substrate processing method includes a liquid film forming step of forming a liquid film of the processing liquid on the upper surface of the substr...
專利號：US16818767
申請人：Thermo Fisher Scientific (Bremen) GmbH
主分類號：G01N30/72
所在地：Bremen
A method for identification of the monoisotopic mass or a parameter correlated to the mass of the isotopes of the isotope distribution of at least one...
專利號：US16308974
申請人：JX Nippon Mining & Metals Corporation
主分類號：H01J37/34
所在地：Tokyo
Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputt...
專利號：US16080642
申請人：Kaneka Corporation
主分類號：G02B5/22
所在地：Osaka
A beam intensity converting film that has sufficient shielding property, sufficient durability, and sufficient heat resistance and that can reduce the...
專利號：US17022078
申請人：ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
主分類號：H01J37/00
所在地：Heimstetten
An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a...
專利號：US16269256
申請人：Howard Hughes Medical Institute
主分類號：H01J37/26
所在地：VA Ashburn
A microscopy system includes a gas cluster beam system configured for generating a beam of gas clusters directed toward a sample to irradiate a sample...
專利號：US16301910
申請人：Hitachi High-Tech Corporation
主分類號：H01J37/20
所在地：Tokyo
The present invention addresses a problem of providing a specimen holder capable of observing phenomena on the surface and in the inner part of a spec...