專利號：US17510370
申請人：Applied Materials, Inc.
主分類號：H01L27/24
所在地：CA Santa Clara
A selector device for a memory cell in a memory array may include a first electrode, and a separator that include a first region of a single-compositi...
專利號：US17132778
申請人：The University of Canterbury
主分類號：H01L45/00
所在地：Christchurch
A lithographically fabricated electrode comprises a continuous metal film; and a discontinuous metal film. The discontinuous metal film has a first ed...
專利號：US16925272
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
主分類號：H10N70/20
所在地：Hsinchu
A semiconductor structure includes a substrate; a resistance variable layer disposed over the substrate; a gate structure disposed over the resistance...
專利號：US17395040
申請人：Samsung Electronics Co., Ltd.
主分類號：H10N70/20
所在地：Suwon-si
A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variabl...
專利號：US17681303
申請人：D-WAVE SYSTEMS INC.
主分類號：H01L39/02
所在地：Burnaby
Systems and methods for fabricating a superconducting integrated circuit that includes wiring layers comprising low-noise material are described. A su...
專利號：US17844741
申請人：UNITED MICROELECTRONICS CORP.
主分類號：H10N50/80
所在地：Hsin-Chu
A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the M...
專利號：US17095752
申請人：UNITED MICROELECTRONICS CORP.
主分類號：H10N50/80
所在地：Hsin-Chu
The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a substrate, a first int...
專利號：US17740145
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H10N50/10
所在地：Hsinchu
A device includes a semiconductor substrate, a bottom conductive line, a bottom electrode, a magnetic tunneling junction (MTJ), and a residue. The bot...
專利號：US16775619
申請人：META PLATFORMS TECHNOLOGIES, LLC
主分類號：H01B1/22
所在地：CA Menlo Park
A liquid dispersion includes a matrix phase of polymerizable material and at least 10% by volume of solid conductive particles distributed throughout ...
專利號：US17988723
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H10N30/00
所在地：Hsinchu
A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact termina...
專利號：US17465351
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H10N50/01
所在地：Hsinchu
Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunnelin...
專利號：US16737177
申請人：Samsung Electronics Co., Ltd.; Samsung SDI Co., Ltd.
主分類號：H01L51/54
所在地：Suwon-si
A condensed cyclic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
專利號：US16640082
申請人：ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.
主分類號：H10K85/60
所在地：Chungcheongnam-do
The present disclosure relates to a plurality of host materials and organic electroluminescent devices comprising the same. The present disclosure may...
專利號：US18104157
申請人：LG Display Co., Ltd.
主分類號：H10K85/60
所在地：Seoul
An organic light emitting display device is provided. The organic light emitting display device includes at least two or more light emitting parts bet...
專利號：US17080732
申請人：Samsung Display Co., Ltd.
主分類號：C07D333/76
所在地：Yongin-si
An organic electroluminescence device of an embodiment of the present disclosure includes a first electrode, a second electrode facing the first elect...
專利號：US16840845
申請人：Samsung Electronics Co., Ltd.
主分類號：C07F15/00
所在地：Suwon-si
An organometallic compound represented by Formula 1, an organic light-emitting device including the organometallic compound, and a diagnostic composit...
專利號：US17135086
申請人：Universities Space Research Association
主分類號：H10K71/13
所在地：CA Mountain View
Method for high throughput, highly reproducible, direct write plasma jet deposition of organic electronic materials through nozzles containing non-con...
專利號：US17479329
申請人：Semiconductor Energy Laboratory Co., Ltd.
主分類號：H01L27/15
所在地：Kanagawa-ken
A high-yield fabricating method of a semiconductor device including a peeling step is provided.A peeling method includes a step of stacking and formin...
專利號：US17254811
申請人：BOE TECHNOLOGY GROUP CO., LTD.
主分類號：H10K71/00
所在地：Beijing
The present disclosure provides a display substrate, a method for preparing the same, and a display device. The display substrate includes an insulati...
專利號：US17214176
申請人：BOE TECHNOLOGY GROUP CO., LTD.
主分類號：H10K59/38
所在地：Beijing
The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate...
專利號：US17428543
申請人：SHARP KABUSHIKI KAISHA
主分類號：H10K59/131
所在地：Sakai
A display device includes: a semiconductor layer; a gate insulating film; a first display wire; a first interlayer insulating film; a second display w...
專利號：US17336365
申請人：Samsung Display Co., Ltd.
主分類號：H10K59/121
所在地：Yongin-Si
A display device may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, a lower gate signal line di...
專利號：US16903357
申請人：Wistron Corporation
主分類號：G02F1/167
所在地：New Taipei
The present invention provides a double-sided e-paper display panel including a first substrate, a second substrate, a light isolation layer, a first ...
專利號：US18117637
申請人：Samsung Display Co., LTD.
主分類號：G09G3/3233
所在地：Yongin-si
A display device includes a first display area and a second display area adjacent to the first display area in a first direction, driving elements, li...
專利號：US17711045
申請人：HKC Corporation Limited; Chongqing HKC Optoelectronics Technology Co., ltd.
主分類號：H10K50/86
所在地：Shenzhen
The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch ass...
專利號：US17274012
申請人：LG CHEM, LTD.
主分類號：H10K50/16
所在地：Seoul
A method of screening for an electron transport material included in an electron transport layer of an organic light emitting device and a method of s...
專利號：US17297160
申請人：JFE Steel Corporation
主分類號：H01L25/00
所在地：Tokyo
Provided is a novel method for producing a laminate that serves as an electron transport layer and an optically transparent electrode layer of a perov...
專利號：US17227438
申請人：Taiwan Semiconductor Manufacturing Company Limited
主分類號：G11C11/00
所在地：Hsinchu
A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermedia...
專利號：US17652970
申請人：International Business Machines Corporation
主分類號：G11C13/00
所在地：NY Armonk
A random number generator comprising resistive random-access memory (RRAM) devices including: a first electrode; a second electrode; a third electrode...
專利號：US17750002
申請人：KIOXIA CORPORATION
主分類號：H10B61/00
所在地：Tokyo
A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second directio...
專利號：US18072546
申請人：Micron Technology, Inc.
主分類號：H01L29/78
所在地：ID Boise
A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal...
專利號：US17368686
申請人：Industrial Technology Research Institute
主分類號：H10B53/30
所在地：Hsinchu
A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed betwee...
專利號：US17463726
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L21/00
所在地：Hsinchu
Semiconductor devices and methods of manufacture are provided wherein a ferroelectric random access memory array is formed with bit line drivers and s...
專利號：US17347596
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H10B51/40
所在地：Hsinchu
An integrated circuit is provided. The integrated circuit includes a three-dimensional memory device, a first word line driving circuit and a second w...
專利號：US17884062
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H10B51/30
所在地：Hsinchu
A device includes a semiconductor substrate; a first word line over the semiconductor substrate, the first word line providing a first gate electrode ...
專利號：US17572154
申請人：SK hynix Inc.
主分類號：H10B43/27
所在地：Icheon-si
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes: a substrate including a peripheral circuit, a ...
專利號：US17176398
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L27/11582
所在地：Suwon-si
A semiconductor device includes a pattern structure; a stack structure including gate and interlayer insulating layers on the pattern structure; and v...
專利號：US17357213
申請人：Samsung Electronics Co., Ltd.
主分類號：H10B43/10
所在地：Suwon-si
A semiconductor device includes a gate electrode structure, a channel, first division patterns, and a second division pattern. The gate electrode stru...
專利號：US17750979
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H10B41/30
所在地：Hsinchu
A memory device includes a substrate, a first transistor and a second transistor, a Schottky diode, a first word line, a second word line, and a bit l...
專利號：US17223359
申請人：Micron Technology, Inc.
主分類號：H01L21/00
所在地：ID Boise
A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a subst...
專利號：US17205954
申請人：Micron Technology, Inc.
主分類號：H10B41/27
所在地：ID Boise
A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insula...
專利號：US17477196
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H10B20/20
所在地：Hsinchu
A semiconductor device includes first nanostructures vertically separated from one another, a first gate structure wrapping around each of the first n...
專利號：US17330381
申請人：ROHM CO., LTD.
主分類號：H10B20/20
所在地：Kyoto
A semiconductor device includes: a semiconductor layer having a main surface; a first conductive type well region formed on a surface portion of the m...
專利號：US17400442
申請人：CHANGXIN MEMORY TECHNOLOGIES, INC.
主分類號：H10B12/00
所在地：Hefei
A semiconductor structure manufacturing method includes that a substrate is provided, in which the substrate includes a substrate layer and a pluralit...
專利號：US17659050
申請人：CHANGXIN MEMORY TECHNOLOGIES, INC.
主分類號：H01L27/108
所在地：Hefei
The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. Th...
專利號：US17306152
申請人：Samsung Electronics Co., Ltd.
主分類號：H10B12/00
所在地：Suwon-si
A semiconductor device includes an active region in a substrate, an isolation film defining the active region in the substrate, a gate trench extendin...
專利號：US17599792
申請人：CHANGXIN MEMORY TECHNOLOGIES, INC.
主分類號：H10B12/00
所在地：Hefei
The present disclosure discloses a semiconductor memory preparation method and a semiconductor memory, relating to the technical field of semiconducto...
專利號：US17402182
申請人：LG Display Co., Ltd.
主分類號：H05K7/20
所在地：Seoul
A display apparatus capable of improving heat-dissipation performance while not increasing a total thickness thereof include a heat-dissipation member...
專利號：US17159520
申請人：LG INNOTEK CO., LTD.
主分類號：H05K7/20
所在地：Seoul
Disclosed is a power conversion device comprising: a case; a switching unit comprising a plurality of switches which are disposed on one side of the c...
專利號：US17547354
申請人：Inventec (Pudong) Technology Corporation; INVENTEC CORPORATION
主分類號：H05K7/20
所在地：Shanghai
A rack temperature controlling method includes performing the following operations through a controller: obtaining a rack temperature data, calculatin...