專利號：US16666441
申請人：JIAXING SUPER LIGHTING ELECTRIC APPLIANCE CO., LTD
主分類號：H01L33/50
所在地：Jiaxing
An LED light bulb, comprising: a lamp housing, a bulb base, connected with the lamp housing; a stem with a stand extending to the center of the lamp h...
專利號：US16576804
申請人：JIAXING SUPER LIGHTING ELECTRIC APPLIANCE CO., LTD
主分類號：H01L33/50
所在地：Jiaxing
An LED light bulb, comprising of: a lamp housing; a bulb base connected to the lamp housing; a stem connected to the bulb base and located in the lamp...
專利號：US16791846
申請人：POINT ENGINEERING CO., LTD.
主分類號：H01L21/48
所在地：Asan
A method for manufacturing a chip-mounting substrate includes a pre-coating step of forming a precoat on a substrate including a plurality of conducti...
專利號：US16416298
申請人：Kunshan New Flat Panel Display Technology Center Co., Ltd.; Kunshan Go-Visionox Opto-Electronics Co., Ltd.
主分類號：H01L33/38
所在地：Kunshan
An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on t...
專利號：US16414775
申請人：Kunshan New Flat Panel Display Technology Center Co., Ltd.; Kunshan Go-Visionox Opto-Electronics Co., Ltd.
主分類號：H01L33/38
所在地：Kunshan
The present application relates to a light emitting diode chip including: a first semiconductor layer and a second semiconductor layer. The first semi...
專利號：US16018883
申請人：Lumileds LLC
主分類號：H01L33/10
所在地：CA San Jose
A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum...
專利號：US15465360
申請人：APPLIED MATERIALS ITALIA S.R.L.
主分類號：H01L31/18
所在地：San Biagio di Callalta
An apparatus for the manufacture of at least two arrangements of solar cell pieces is provided. The apparatus includes at least one positioning device...
專利號：US15385316
申請人：LG ELECTRONICS INC.
主分類號：H01L31/0368
所在地：Seoul
Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline ...
專利號：US16488068
申請人：OSRAM Opto Semiconductors GmbH
主分類號：H01L31/16
所在地：Regensburg
A sensor element is disclosed. In an embodiment a sensor element includes a substrate, a light emitting semiconductor chip arranged with a mounting fa...
專利號：US15885757
申請人：Hoon Kim
主分類號：H01L21/00
所在地：Seoul
Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a...
專利號：US15730499
申請人：KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION; KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
主分類號：H01L31/054
所在地：Seoul
Disclosed is a thin film solar cell for BIPV capable of improving a utility value for the exterior by visually changing a black color of an inorganic ...
專利號：US15756391
申請人：SOLARWAT LTD
主分類號：H01L31/05
所在地：Even Yehuda
A solar array module system for generating electric-power, preconfigured to prevent electric blockage of the module when a physical row of solar cells...
專利號：US15775471
申請人：JOHNSON MATTHEY PUBLIC LIMITED COMPANY
主分類號：H01L31/0224
所在地：London
The present invention relates to a conductive paste for forming a conductive track or coating on a substrate, particularly suitable for use in solar c...
專利號：US16452311
申請人：United Microelectronics Corp.
主分類號：H01L29/792
所在地：Hsinchu
A structure of a memory device and a fabrication method thereof are provided. The structure of the memory device includes a tunneling layer disposed o...
專利號：US16406385
申請人：Micron Technology, Inc.
主分類號：H01L29/786
所在地：ID Boise
A transistor comprises a pair of source/drain regions having a channel region there-between. A transistor gate construction is operatively proximate t...
專利號：US16262309
申請人：SOCIONEXT INC.
主分類號：H01L29/00
所在地：Kanagawa
Provided is a semiconductor chip including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturi...
專利號：US16199906
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/78
所在地：Hsinchu
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a gate structure formed over t...
專利號：US16177072
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L29/78
所在地：Hsinchu
A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a...
專利號：US16714809
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/78
所在地：Hsinchu
A fin-type field effect transistor comprising a substrate, a plurality of insulators, at least one gate stack and strained material portions is descri...
專利號：US16710209
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/165
所在地：Hsinchu
Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-...
專利號：US16911981
申請人：Infineon Technologies Austria AG
主分類號：H01L29/78
所在地：Villach
A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An a...
專利號：US16718748
申請人：Infineon Technologies Austria AG
主分類號：H01L29/78
所在地：Villach
A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical ...
專利號：US14032718
申請人：Cree, Inc.
主分類號：H01L29/78
所在地：NC Durham
A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain conta...
專利號：US13251961
申請人：Ta-Wei Kao; Shiang-Bau Wang; Ming-Jie Huang; Chi-Hsi Wu; Shu-Yuan Ku
主分類號：H01L29/76
所在地：Sijhih
A semiconductor device is formed by a multi-step etching process that produces trench openings in a silicon substrate immediately adjacent transistor ...
專利號：US16413815
申請人：Infineon Technologies AG
主分類號：H01L29/739
所在地：Neubiberg
A power semiconductor device includes a semiconductor body having a front side coupled to a first load terminal structure and a backside coupled to a ...
專利號：US16142890
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.; National Taiwan University
主分類號：H01L29/739
所在地：Hsinchu
Gated MIS tunnel diode devices having a controllable negative transconductance behavior are provided. In some embodiments, a device includes a substra...
專利號：US16726039
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L21/00
所在地：Hsinchu
A method includes forming a first epitaxial layer having a first dopant over a substrate; etching the first epitaxial layer to form a fin with a polar...
專利號：US16396961
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L21/265
所在地：Hsinchu
Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming ...
專利號：US16600904
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/66
所在地：Hsin-Chu
A method includes providing a structure having a substrate and a fin extending from the substrate, wherein the fin includes a first semiconductor mate...
專利號：US16209890
申請人：UNITED MICROELECTRONICS CORP.
主分類號：H01L21/02
所在地：Hsin-Chu
A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to pe...
專利號：US16408755
申請人：Infineon Technologies AG
主分類號：H01L29/06
所在地：Neubiberg
The disclosure relates to a method for producing a semiconductor device. The method includes providing a semiconductor body having first dopants of a ...
專利號：US16569859
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L29/76
所在地：Hsinchu
A method includes forming a dummy gate electrode layer over a semiconductor region, forming a mask strip over the dummy gate electrode layer, and perf...
專利號：US16055399
申請人：Taiwan Semiconductor Manufacturing Company, Ltd.
主分類號：H01L29/66
所在地：Hsinchu
A method includes forming a dummy gate stack over a semiconductor region, forming a dielectric layer at a same level as the dummy gate stack, removing...
專利號：US16695392
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/66
所在地：Hsin-Chu
Some embodiments of the present disclosure relate to a HEMT. The HEMT includes a heterojunction structure having a second III/V semiconductor layer ar...
專利號：US16665296
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/51
所在地：Hsinchu
A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating laye...
專利號：US15707577
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
主分類號：H01L29/51
所在地：Hsinchu
A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second p...
專利號：US16532750
申請人：Samsung Electronics Co., Ltd.
主分類號：H01L29/267
所在地：Suwon-si
A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern in...
專利號：US16207788
申請人：KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
主分類號：H01L29/20
所在地：Nagakute
A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direct...
專利號：US16427844
申請人：FUJI ELECTRIC CO., LTD.
主分類號：H01L29/16
所在地：Kawasaki
During epitaxial growth of an n?-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n...
專利號：US15753745
申請人：Nokia Technologies Oy
主分類號：H01L29/16
所在地：Espoo
A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; for...
專利號：US16747445
申請人：equal1.labs Inc.
主分類號：H01L29/12
所在地：CA Fremont
Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented...
專利號：US15940617
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L29/06
所在地：Hsinchu
In an embodiment, an integrated circuit (IC) device comprises a semiconductor substrate, an isolation region and an active region disposed on the semi...
專利號：US16449350
申請人：RICHTEK TECHNOLOGY CORPORATION
主分類號：H01L29/06
所在地：Zhubei
A high voltage device includes: a semiconductor layer, an isolation region, a deep well, a buried layer, a first high voltage well, a first conductivi...
專利號：US15688833
申請人：FAIRCHILD SEMICONDUCTOR CORPORATION
主分類號：H01L29/66
所在地：CA Sunnyvale
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
專利號：US16273260
申請人：Taiwan Semiconductor Manufacturing Co., Ltd.
主分類號：H01L49/02
所在地：Hsin-Chu
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a substrate having isolation structures therein a...
專利號：US15627614
申請人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
主分類號：H01L49/02
所在地：Hsinchu
Methods of manufacturing trench capacitors include forming a trench opening in a substrate, depositing a first dielectric layer over a sidewall and a ...
專利號：US16375063
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：H01L21/00
所在地：Yongin-si
A display apparatus includes a substrate, a wire having an inner edge including first and second portions, a first insulating layer covering a portion...
專利號：US16440568
申請人：SAMSUNG DISPLAY CO., LTD.
主分類號：H01L27/32
所在地：Yongin-si
A display device includes a display panel, a light shielding member, a first cover member, a first light transmitting member, and a second cover membe...
專利號：US16311691
申請人：Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
主分類號：H01L27/32
所在地：Wuhan
An OLED display panel and an OLED display are provided. The OLED display panel includes a substrate, and a first gate electrode layer, a source drain ...
專利號：US15925603
申請人：Samsung Display Co., Ltd.
主分類號：H01L27/32
所在地：Yongin-si
An organic light emitting diode display includes: a substrate; a scan line formed over the substrate and transmitting a scan signal; a data line cross...